Report
Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties
| العنوان: | Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties |
|---|---|
| المؤلفون: | Elsen, M., Jaffres, H., Mattana, R., Thevenard, L., Lemaitre, A., George, J. -M. |
| سنة النشر: | 2007 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is shown to be associated to the increase of both exchange energy $\Delta$$_{exch}$ and hole concentration by reduction of the Mn interstitial atom in the top magnetic electrode. Through a 6x6 band k.p model, we established general phase diagrams of tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) \textit{vs.} (Ga,Mn)As Fermi energy (E$_F$) and spin-splitting parameter (B$_G$). This allows to give a rough estimation of the exchange energy $\Delta$$_{exch}$=6B$_G$$\simeq$120 meV and hole concentration p$\simeq1.10^{20}$cm$^{-3}$ of (Ga,Mn)As and beyond gives the general trend of TMR and TAMR \textit{vs.} the selected hole band involved in the tunneling transport. Comment: 6 pages, 4 figures. submitted to Phys. Rev. B |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/0706.0109 |
| رقم الانضمام: | edsarx.0706.0109 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |