Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by
| العنوان: | Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by |
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| المؤلفون: | Anwar, Siddique, Raju, Ahmed, Jonathan, Anderson, Mark, Holtz, Edwin L, Piner |
| المصدر: | ACS applied materialsinterfaces. 13(15) |
| سنة النشر: | 2021 |
| تدمد: | 1944-8252 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=pmid________::2e68527223fdbff777d3a9ba9c79621d https://pubmed.ncbi.nlm.nih.gov/33823581 |
| رقم الانضمام: | edsair.pmid..........2e68527223fdbff777d3a9ba9c79621d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448252 |
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