Significant Performance Improvement in n-Channel Organic Field-Effect Transistors with C

التفاصيل البيبلوغرافية
العنوان: Significant Performance Improvement in n-Channel Organic Field-Effect Transistors with C
المؤلفون: Sungho, Nam, Dongyoon, Khim, Gerardo T, Martinez, Aakash, Varambhia, Peter D, Nellist, Youngkyoo, Kim, Thomas D, Anthopoulos, Donal D C, Bradley
المصدر: Advanced materials (Deerfield Beach, Fla.). 33(31)
سنة النشر: 2021
الوصف: Solution-processed organic field-effect transistors (OFETs) have attracted great interest due to their potential as logic devices for bendable and flexible electronics. In relation to n-channel structures, soluble fullerene semiconductors have been widely studied. However, they have not yet met the essential requirements for commercialization, primarily because of low charge carrier mobility, immature large-scale fabrication processes, and insufficient long-term operational stability. Interfacial engineering of the carrier-injecting source/drain (S/D) electrodes has been proposed as an effective approach to improve charge injection, leading also to overall improved device characteristics. Here, it is demonstrated that a non-conjugated neutral dipolar polymer, poly(2-ethyl-2-oxazoline) (PEOz), formed as a nanodot structure on the S/D electrodes, enhances electron mobility in n-channel OFETs using a range of soluble fullerenes. Overall performance is especially notable for (C
تدمد: 1521-4095
URL الوصول: https://explore.openaire.eu/search/publication?articleId=pmid________::2bd9ac4601b96662a04abb9879ace67b
https://pubmed.ncbi.nlm.nih.gov/34165833
رقم الانضمام: edsair.pmid..........2bd9ac4601b96662a04abb9879ace67b
قاعدة البيانات: OpenAIRE