Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films

التفاصيل البيبلوغرافية
العنوان: Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films
المؤلفون: Inrok Hwang, Tae-Hee Noh, Soonkoo Lee, Yeong Jae Shin, Byung-Gu Jeon, Seon-Ah Yang, Daniel Sando, Myung Rae Cho, Jong-Gul Yoon
المصدر: Scientific Reports
SCIENTIFIC REPORTS(5)
بيانات النشر: Springer Science and Business Media LLC, 2015.
سنة النشر: 2015
مصطلحات موضوعية: Multidisciplinary, Materials science, Piezoresponse force microscopy, Creep, Condensed matter physics, Electric field, Electrode, Dynamics (mechanics), Thin film, Epitaxy, Bioinformatics, Ferroelectricity, Article
الوصف: Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated ‘creep’ motion plays a significant role in domain wall dynamics and accordingly, detailed understanding of the system’s switching properties requires that this creep motion be taken into account. Despite this importance, few studies have investigated creep motion in ferroelectric films under ac-driven force. Here, we explore ac hysteretic dynamics in epitaxial BiFeO3 thin films, through ferroelectric hysteresis measurements and stroboscopic piezoresponse force microscopy. We reveal that identically-fabricated BiFeO3 films on SrRuO3 or La0.67Sr0.33MnO3 bottom electrodes exhibit markedly different switching behaviour, with BiFeO3/SrRuO3 presenting essentially creep-free dynamics. This unprecedented result arises from the distinctive spatial inhomogeneities of the internal fields, these being influenced by the bottom electrode’s surface morphology. Our findings further highlight the importance of controlling interface and defect characteristics, to engineer ferroelectric devices with optimised performance.
تدمد: 2045-2322
DOI: 10.1038/srep10485
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc963153fda952392335efa4cc996d40
https://doi.org/10.1038/srep10485
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....fc963153fda952392335efa4cc996d40
قاعدة البيانات: OpenAIRE
الوصف
تدمد:20452322
DOI:10.1038/srep10485