Tuning material properties of oxides and nitrides by substrate biasing during plasma-enhanced atomic layer deposition on planar and 3D substrate topographies
| العنوان: | Tuning material properties of oxides and nitrides by substrate biasing during plasma-enhanced atomic layer deposition on planar and 3D substrate topographies |
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| المؤلفون: | Mariadriana Creatore, Jon Henri, Adriana Szeghalmi, Harm C. M. Knoops, Saurabh Karwal, Marcel A. Verheijen, Vivek Beladiya, Akhil Sharma, Dennis M. Hausmann, Tahsin Faraz, Wilhelmus M. M. Kessels, Cristian A. A. van Helvoirt |
| المساهمون: | Plasma & Materials Processing, Interfaces in future energy technologies, Atomic scale processing, Processing of low-dimensional nanomaterials, Center for Quantum Materials and Technology Eindhoven |
| المصدر: | ACS Applied Materials & Interfaces ACS Applied Materials & Interfaces, 10(15), 13158-13180. American Chemical Society |
| بيانات النشر: | American Chemical Society, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | ion bombardment, nitrides, Materials science, thin film, plasma ALD, Oxide, 02 engineering and technology, Substrate (electronics), Nitride, 01 natural sciences, SiNx, Atomic layer deposition, chemistry.chemical_compound, TiN, 0103 physical sciences, TiO2, General Materials Science, Thin film, Plasma processing, HfO2, 010302 applied physics, business.industry, tuning material properties, HfNx, Biasing, ion energy control, 021001 nanoscience & nanotechnology, substrate biasing, chemistry, atomic layer deposition, oxides, Optoelectronics, SiO2, 0210 nano-technology, Material properties, business, Research Article |
| الوصف: | Oxide and nitride thin-films of Ti, Hf, and Si serve numerous applications owing to the diverse range of their material properties. It is therefore imperative to have proper control over these properties during materials processing. Ion-surface interactions during plasma processing techniques can influence the properties of a growing film. In this work, we investigated the effects of controlling ion characteristics (energy, dose) on the properties of the aforementioned materials during plasma-enhanced atomic layer deposition (PEALD) on planar and 3D substrate topographies. We used a 200 mm remote PEALD system equipped with substrate biasing to control the energy and dose of ions by varying the magnitude and duration of the applied bias, respectively, during plasma exposure. Implementing substrate biasing in these forms enhanced PEALD process capability by providing two additional parameters for tuning a wide range of material properties. Below the regimes of ion-induced degradation, enhancing ion energies with substrate biasing during PEALD increased the refractive index and mass density of TiOx and HfOx and enabled control over their crystalline properties. PEALD of these oxides with substrate biasing at 150 °C led to the formation of crystalline material at the low temperature, which would otherwise yield amorphous films for deposition without biasing. Enhanced ion energies drastically reduced the resistivity of conductive TiNx and HfNx films. Furthermore, biasing during PEALD enabled the residual stress of these materials to be altered from tensile to compressive. The properties of SiOx were slightly improved whereas those of SiNx were degraded as a function of substrate biasing. PEALD on 3D trench nanostructures with biasing induced differing film properties at different regions of the 3D substrate. On the basis of the results presented herein, prospects afforded by the implementation of this technique during PEALD, such as enabling new routes for topographically selective deposition on 3D substrates, are discussed. |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 1944-8252 1944-8244 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed804ac20abb215bc902857beb35c9c5 https://research.tue.nl/en/publications/fbf8d40f-039f-43bf-b1d2-cc56e1d649f0 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....ed804ac20abb215bc902857beb35c9c5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448252 19448244 |
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