Dislocation structure and mobility in the layered semiconductor InSe: A first-principles study

التفاصيل البيبلوغرافية
العنوان: Dislocation structure and mobility in the layered semiconductor InSe: A first-principles study
المؤلفون: Alexander N. Rudenko, Yu. N. Gornostyrev, Mikhail I. Katsnelson
المصدر: 2d Materials, 8, 4, pp. 1-8
2d Materials, 8, 1-8
2D Materials
بيانات النشر: arXiv, 2021.
سنة النشر: 2021
مصطلحات موضوعية: SEMICONDUCTING SELENIUM COMPOUNDS, Materials science, Theory of Condensed Matter, MULTI-SCALE APPROACHES, Structure (category theory), FOS: Physical sciences, Electronic structure, Plasticity, SEMICONDUCTORS, Low energy, PARAMETRIZATIONS, FIRST-PRINCIPLES CALCULATIONS, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), MOBILITY OF DISLOCATIONS, General Materials Science, DISLOCATION STRUCTURES, PLASTICITY, DISLOCATIONS, FIRST-PRINCIPLE STUDY, INDIUM COMPOUNDS, Condensed Matter - Materials Science, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Mechanical Engineering, Materials Science (cond-mat.mtrl-sci), General Chemistry, Condensed Matter Physics, PEIERLS-NABARRO MODEL, CALCULATIONS, DISLOCATION MOBILITY, Semiconductor, Mechanics of Materials, INSE, DISLOCATION, FIRST PRINCIPLES, Dislocation, business, STACKING FAULTS, Parametrization, FIRST PRINCIPLE CALCULATIONS, Stacking fault
الوصف: The structure and mobility of dislocations in the layered semiconductor InSe is studied within a multiscale approach based on generalized Peierls--Nabarro model with material-specific parametrization derived from first principles. The plasticity of InSe turns out to be attributed to peculiarities of the generalized stacking fault relief for the interlayer dislocation slips such as existence of the stacking fault with a very low energy and low energy barriers. Our results give a consistent microscopic explanation of recently observed [Science {\bf 369}, 542 (2020)] exceptional plasticity of InSe.
Comment: 7 pages, 5 figures
وصف الملف: application/pdf
تدمد: 2053-1583
DOI: 10.48550/arxiv.2107.05014
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e869fcc49237ef4dd33f6e25003557c2
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....e869fcc49237ef4dd33f6e25003557c2
قاعدة البيانات: OpenAIRE
الوصف
تدمد:20531583
DOI:10.48550/arxiv.2107.05014