A CMOS readout circuit for a low shunt resistance IR photo-detector
العنوان: | A CMOS readout circuit for a low shunt resistance IR photo-detector |
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المؤلفون: | Philippe Benabes, Saman Fatima, Mohamed Ben Chouikha, Caroline Lelandais-Perrault, Emilie Avignon Meseldzija |
المساهمون: | Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS) |
المصدر: | ICECS 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS) 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Nov 2020, Glasgow, United Kingdom. pp.1-4, ⟨10.1109/ICECS49266.2020.9294945⟩ |
بيانات النشر: | IEEE, 2020. |
سنة النشر: | 2020 |
مصطلحات موضوعية: | Photocurrent, Materials science, Shunt impedance, business.industry, 020208 electrical & electronic engineering, 010401 analytical chemistry, Transistor, Detector, Photodetector, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Capacitance, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0104 chemical sciences, law.invention, CMOS, law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, Electrical impedance, ComputingMilieux_MISCELLANEOUS |
الوصف: | Specific Infrared (IR) detection systems are a solution for non-invasive monitoring of polymer aging in electrical power plants. For such application, the target photo-detector has a low shunt impedance of 40Ω and produces a large photocurrent of 70 µA. This paper proposes a readout circuit designed in XFAB 0.18µm technology. Based on a CMDI architecture, a bi-cascode current mirroring direct injection circuit is proposed. It offers a 98 % charge injection efficiency. The structure performs the DC current cancellation and integrate the resulting current in a 20pF capacitance. The 20µs duration pulses are integrated with a linearity error of 0.01 %. |
DOI: | 10.1109/icecs49266.2020.9294945 |
DOI: | 10.1109/ICECS49266.2020.9294945⟩ |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db897625fb211059c314ae843a1ea858 https://doi.org/10.1109/icecs49266.2020.9294945 |
Rights: | CLOSED |
رقم الانضمام: | edsair.doi.dedup.....db897625fb211059c314ae843a1ea858 |
قاعدة البيانات: | OpenAIRE |
DOI: | 10.1109/icecs49266.2020.9294945 |
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