Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
| العنوان: | Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene |
|---|---|
| المؤلفون: | Jun Li, Patrick C. Mende, Randall M. Feenstra |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Physics, Physics and Astronomy (miscellaneous), Condensed Matter - Mesoscale and Nanoscale Physics, Graphene, FOS: Physical sciences, Hexagonal boron nitride, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Crystallography, chemistry.chemical_compound, chemistry, law, 0103 physical sciences, Borazine, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Epitaxial graphene, Electron microscope, 010306 general physics, 0210 nano-technology |
| الوصف: | Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the surface graphene. Low-energy electron microscopy is employed to provide definitive signatures of the number and composition of two-dimensional (2D) planes across the surface. These grains are found to form by substitution for the surface graphene, with the C atoms produced by this substitution then being incorporated below the h-BN (at the interface between the existing graphene and the SiC) to form a new graphene plane. 9 pages (with 3 figures), plus 9 pages of Supplementary Material (with 7 figures) |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da8f0c0406b28fce14e389541244bf5c http://arxiv.org/abs/1807.02539 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....da8f0c0406b28fce14e389541244bf5c |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |