Thermal behaviors and ageing of GaAs and InGaP solar cells for thermal-CPV hybrid energy systems
| العنوان: | Thermal behaviors and ageing of GaAs and InGaP solar cells for thermal-CPV hybrid energy systems |
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| المؤلفون: | Vincent Aimez, Artur Turala, Abdelatif Jaouad, Richard Arès, Boussairi Bouzazi, Simon Fafard |
| المساهمون: | Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS) |
| المصدر: | AIP Conference Proceedings 2017, Ottawa, AIP Conference Proceedings, 1881, pp.050001, 2017, ⟨10.1063/1.5001431⟩ 13TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-13) 13TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-13), May 2017, Ottawa, Canada. pp.050001 |
| بيانات النشر: | Author(s), 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Drop (liquid), Hybrid energy, 02 engineering and technology, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Suns in alchemy, 7. Clean energy, 01 natural sciences, [SPI]Engineering Sciences [physics], Operating temperature, Ageing, 0103 physical sciences, Thermal, Optoelectronics, Degradation (geology), 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS |
| الوصف: | The main parameters of InGaP and GaAs thin solar cells (SCs) at average light concentration ratios (X) of ~54 and ~93 suns were investigated in the temperature range 25-250 °C. The main parameters of the two devices showed quasi-linear behaviors with increasing the operating temperature. The conversion efficiencies were found to drop ~27 and ~40 % in InGaP and GaAs, respectively independently of the two concentration ratios. Furthermore, the two devices showed a decrease in output power averagely ranging from 25 to 27 %, which yields to a difference less than 2%. In term of thermal reliability, the two devices did not show significant degradation after approximately 4 months of heat dumping. Hence, these results imply that GaAs still deliver more output power at 250 °C. |
| تدمد: | 0094-243X 1551-7616 |
| DOI: | 10.1063/1.5001431 |
| DOI: | 10.1063/1.5001431⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d588c9bdd560cf3d560c60e07cd79d34 https://doi.org/10.1063/1.5001431 |
| رقم الانضمام: | edsair.doi.dedup.....d588c9bdd560cf3d560c60e07cd79d34 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 0094243X 15517616 |
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| DOI: | 10.1063/1.5001431 |