High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection
| العنوان: | High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection |
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| المؤلفون: | Hsin Lin, Lei Xu, Steven Lukman, Jinghua Teng, Gang Zhang, Kristian Sommer Thygesen, Yuan Ping Feng, Sheng Luo, Liang-Zi Yao, Qing Yang Steve Wu, Yong-Wei Zhang, Anders C. Riis-Jensen, Ming Yang, Chuang-Han Hsu, Ye Tao, Lu Ding, Gengchiau Liang, Qi Jie Wang |
| المساهمون: | School of Electrical and Electronic Engineering, Institute of Materials Research and Engineering, A*STAR, Institute of High Performance Computing, A*STAR |
| المصدر: | Nature Nanotechnology Lukman, S, Ding, L, Xu, L, Tao, Y, Riis-Jensen, A C, Zhang, G, Wu, Q Y S, Yang, M, Luo, S, Hsu, C, Yao, L, Liang, G, Lin, H, Zhang, Y W, Thygesen, K S, Wang, Q J, Feng, Y & Teng, J 2020, ' High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection ', Nature Nanotechnology, vol. 15, no. 8, pp. 675-682 . https://doi.org/10.1038/s41565-020-0717-2 |
| بيانات النشر: | Springer Science and Business Media LLC, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Materials science, Physics::Instrumentation and Detectors, Oscillator strength, Infrared, Band gap, Exciton, Biomedical Engineering, Physics::Optics, Photodetector, Bioengineering, 02 engineering and technology, Photodetection, 010402 general chemistry, 7. Clean energy, 01 natural sciences, Condensed Matter::Materials Science, Responsivity, General Materials Science, 2D heterostructure, Electrical and Electronic Engineering, business.industry, Heterojunction, 2D materials, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Electrical and electronic engineering [Engineering], Optoelectronics, 0210 nano-technology, business |
| الوصف: | The development of infrared photodetectors is mainly limited by the choice of available materials and the intricate crystal growth process. Moreover, thermally activated carriers in traditional III-V and II-VI semiconductors enforce low operating temperatures in the infrared photodetectors. Here we demonstrate infrared photodetection enabled by interlayer excitons (ILEs) generated between tungsten and hafnium disulfide, WS2/HfS2. The photodetector operates at room temperature and shows an even higher performance at higher temperatures owing to the large exciton binding energy and phonon-assisted optical transition. The unique band alignment in the WS2/HfS2 heterostructure allows interlayer bandgap tuning from the mid- to long-wave infrared spectrum. We postulate that the sizeable charge delocalization and ILE accumulation at the interface result in a greatly enhanced oscillator strength of the ILEs and a high responsivity of the photodetector. The sensitivity of ILEs to the thickness of two-dimensional materials and the external field provides an excellent platform to realize robust tunable room temperature infrared photodetectors. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) Accepted version The work is supported by the Agency for Science, Technology and Research (A*STAR) under the 2D Materials Pharos Program (grant no. 152 700014 and grant no. 152 700017). Q.J.W. acknowledges funding from the National Research Foundation Competitive Research Program (NRF-CRP18-2017-02 and NRF–CRP19–2017–01). K.S.T. acknowledges support from the Center for Nanostructured Graphene (CNG) under the Danish National Research Foundation (project DNRF103) and from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant no. 773122, LIMA). G.L. acknowledges the supported under the grant MOE2017-T2-1-114. H.L. acknowledges the support by the Ministry of Science and Technology (MOST) in Taiwan under grant no. MOST 109-2112-M-001-014-MY3. J.T. and S. Lukman thank C. W. Lee, A. Ngo and M. Zhao for their valuable inputs and K Hippalgaonkar for sharing tools in the device fabrication. |
| وصف الملف: | application/pdf |
| تدمد: | 1748-3395 1748-3387 |
| DOI: | 10.1038/s41565-020-0717-2 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3f80c09a8ca34768da38b88ef443877 https://doi.org/10.1038/s41565-020-0717-2 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....d3f80c09a8ca34768da38b88ef443877 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17483395 17483387 |
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| DOI: | 10.1038/s41565-020-0717-2 |