Scattering mechanisms in high-mobility strained Ge channels
| العنوان: | Scattering mechanisms in high-mobility strained Ge channels |
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| المؤلفون: | H. von Känel, Giovanni Isella, B. Rössner, Daniel Chrastina |
| المصدر: | Applied Physics Letters. 84:3058-3060 |
| بيانات النشر: | AIP Publishing, 2004. |
| سنة النشر: | 2004 |
| مصطلحات موضوعية: | Semiconductor thin films, Limiting factor, Materials science, Physics and Astronomy (miscellaneous), chemistry, Condensed matter physics, Scattering, Impurity, Doping, Analytical chemistry, chemistry.chemical_element, Germanium, Chemical vapor deposition |
| الوصف: | We report on the low-temperature mobility in remotely doped p-type strained Ge layers on relaxed Si0.3Ge0.7 virtual substrates, grown by low-energy plasma-enhanced chemical vapor deposition. A maximum mobility of 120 000 cm2 V−1 s−1 has been reached at 2 K, at a carrier sheet density of 8.5×1011 cm−2. Analysis of the mobility and Dingle ratio τ/τq as a function of sheet density suggests that remote impurity scattering is the limiting factor at low sheet densities, but that interface impurities become more important as the sheet density increases. |
| تدمد: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1707223 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca989941ff22c262f7d2f4d4028ccce7 https://doi.org/10.1063/1.1707223 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....ca989941ff22c262f7d2f4d4028ccce7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10773118 00036951 |
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| DOI: | 10.1063/1.1707223 |