Force-Driven Single-Atom Manipulation on a Low-Reactive Si Surface for Tip Sharpening

التفاصيل البيبلوغرافية
العنوان: Force-Driven Single-Atom Manipulation on a Low-Reactive Si Surface for Tip Sharpening
المؤلفون: Pingo Mutombo, Martin Švec, Jan Berger, Pavel Jelínek, Evan J. Spadafora
المصدر: Small
بيانات النشر: Wiley, 2015.
سنة النشر: 2015
مصطلحات موضوعية: Materials science, Dopant, Bilayer, Dangling bond, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Biomaterials, Crystallography, Vacancy defect, 0103 physical sciences, Atom, Surface modification, General Materials Science, Density functional theory, Vertical displacement, 010306 general physics, 0210 nano-technology, Biotechnology
الوصف: A single atomic manipulation on the delta-doped B:Si(111)-(√3x√3)R30° surface using a low temperature dynamic atomic force microscopy based on the Kolibri sensor is investigated. Through a controlled vertical displacement of the probe, a single Si adatom in order to open a vacancy is removed. It is shown that this process is completely reversible, by accurately placing a Si atom back into the vacancy site. In addition, density functional theory simulations are carried out to understand the underlying mechanism of the atomic manipulation in detail. This process also rearranges the atoms at the tip apex, which can be effectively sharpened in this way. Such sharper tips allow for a deeper look into the Si adatom vacancy site. Namely, high-resolution images of the vacancy showing subsurface Si dangling bond triplets, which surround the substitutional B dopant atom in the first bilayer, are achieved.
تدمد: 1613-6810
DOI: 10.1002/smll.201500092
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6ee00ca39c9519a04069c2c3070a968
Rights: CLOSED
رقم الانضمام: edsair.doi.dedup.....c6ee00ca39c9519a04069c2c3070a968
قاعدة البيانات: OpenAIRE
الوصف
تدمد:16136810
DOI:10.1002/smll.201500092