Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates
| العنوان: | Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates |
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| المؤلفون: | Richard Arès, Mohammad Reza Aziziyan, Simon Fafard, Mourad Jellite, Mohamed El-Gahouchi, Thierno M. O. Diallo, Abderraouf Boucherif, Alex Brice Poungoué Mbeunmi, Roxana Arvinte |
| المساهمون: | Laboratoire QUARTZ (QUARTZ ), Université Paris 8 Vincennes-Saint-Denis (UP8)-SUPMECA - Institut supérieur de mécanique de Paris-Ecole Nationale Supérieure de l'Electronique et de ses Applications (ENSEA)-Ecole Internationale des Sciences du Traitement de l'Information (EISTI), Département de génie électrique et génie informatique [Sherbrooke] (Institut Interdisciplinaire d'Innovation Technologique), Université de Sherbrooke [Sherbrooke], Laboratoire Nanotechnologies Nanosystèmes (LN2), Université de Sherbrooke [Sherbrooke]-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université Paris 8 Vincennes-Saint-Denis (UP8)-Ecole Nationale Supérieure de l'Electronique et de ses Applications (ENSEA)-SUPMECA - Institut supérieur de mécanique de Paris (SUPMECA)-Ecole Internationale des Sciences du Traitement de l'Information (EISTI), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) |
| المصدر: | Journal of Vacuum Science and Technology B Journal of Vacuum Science and Technology B, 2019, 37 (3), pp.031208. ⟨10.1116/1.5088962⟩ |
| بيانات النشر: | HAL CCSD, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, 02 engineering and technology, Chemical vapor deposition, Epitaxy, 01 natural sciences, Chemical beam epitaxy, [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, 0103 physical sciences, Materials Chemistry, Wafer, Electrical and Electronic Engineering, Triethylgallium, Instrumentation, 010302 applied physics, business.industry, Process Chemistry and Technology, Doping, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Full width at half maximum, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Trimethylindium, 0210 nano-technology, business |
| الوصف: | International audience; The quality and properties of epitaxial films are strongly determined by the reactor type and the precursor source phase. Such parameters can impose limitations in terms of background doping, interface sharpness, clustering, phase separation, and homogeneity. The authors have implemented a hybrid epitaxy technique that employs, simultaneously, vapor and solid sources as group III precursors. The system combines the high throughput and the versatility of gas sources as well as the high purity of solid sources. Using this technique, the authors successfully demonstrated epitaxial growth of Al0.48In0.52As and Ga0.47In0.53As layers on Fe-doped semi-insulating InP (001) substrates with interesting properties, compared with the epilayers grown by more standard techniques (chemical beam epitaxy, metal-organic chemical vapor deposition, and MBE). For AlInAs growth, trimethylindium and solid aluminum were used as In and Al precursors, respectively. In the case of GaInAs, triethylgallium and solid indium were used, respectively, as Ga and In precursors. Thermally cracked arsine (AsH3) was used as an As (group V) precursor for both alloys. The AlInAs and GaInAs epilayers grown at a temperature of 500 °C exhibited featureless surfaces with RMS roughness of 0.2 and 1 nm, respectively. Lattice mismatch is of 134 ppm, for AlInAs, and −96 ppm, for GaInAs, which were determined from high-resolution x-ray diffraction (HR-XRD) patterns and showed a large number of Pendellösung fringes, indicating a high crystalline quality. An FWHM of 18.5 arcs was obtained for GaInAs epilayers, while HR-XRD mapping of a full 2-in. wafer confirmed a viable lattice mismatch homogeneity (standard deviation of 0.026%) for as-grown layers. The authors observed room-temperature background doping values as low as 3 × 1015 cm−3, for AlInAs, and 1 × 1015 cm−3, for GaInAs. Analysis of the PL spectra at 20 K showed an FWHM of 8 meV, for AlInAs, and 9.7 meV, for GaInAs, demonstrating a very good optical quality of the epilayers. In addition, they have investigated the effects of the growth temperature and of the arsine pressure on epilayer properties. They also discuss the optimum conditions for the growth of high-quality Al0.48In0.52As and Ga0.47In0.53As layers on InP (001) substrates using this hybrid epitaxy technique. |
| اللغة: | English |
| DOI: | 10.1116/1.5088962⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b48797f4b2d8f392e99bda983c43dd09 https://hal.archives-ouvertes.fr/hal-02148771/document |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....b48797f4b2d8f392e99bda983c43dd09 |
| قاعدة البيانات: | OpenAIRE |
| DOI: | 10.1116/1.5088962⟩ |
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