التفاصيل البيبلوغرافية
| العنوان: |
Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells |
| المؤلفون: |
Bjoern Niesen, Esteban Rucavado, Sylvain Nicolay, Christophe Ballif, X. Niquille, Jérémie Werner, Robby Peibst, Arnaud Walter, Soo Jin Moon, Monica Morales-Masis, Michael Rienaecker, Rolf Brendel, Philipp Löper, Davide Sacchetto, Stefaan De Wolf |
| المصدر: |
Applied Physics Letters |
| سنة النشر: |
2016 |
| مصطلحات موضوعية: |
Materials science, Physics and Astronomy (miscellaneous), Silicon, Inorganic chemistry, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Monocrystalline silicon, zinc tin oxide, Crystalline silicon, Perovskite (structure), Mesoscopic physics, Tandem, business.industry, recombination layer, 021001 nanoscience & nanotechnology, perovskite/silicon, 0104 chemical sciences, chemistry, Optoelectronics, tandem solar cells, 0210 nano-technology, business, Layer (electronics), Recombination |
| الوصف: |
Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3b4bf50f45246741d1db8f8b71d3bc5 |
| Rights: |
OPEN |
| رقم الانضمام: |
edsair.doi.dedup.....b3b4bf50f45246741d1db8f8b71d3bc5 |
| قاعدة البيانات: |
OpenAIRE |