Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition
| العنوان: | Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition |
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| المؤلفون: | Antoniu Moldovan, Carmen Galassi, N. Scarisoreanu, P. Verardi, Maria Dinescu, Floriana Craciun, A. Purice |
| المصدر: | Materials science & engineering. B, Solid-state materials for advanced technology 118 (2005): 39–43. doi:10.1016/j.mseb.2004.12.067 info:cnr-pdr/source/autori:P. Verardi (a); F. Craciun (b); M. Dinescu (c); N. Scarisoreanu (c); A. Moldovan (c); A. Purice (c); C. Galassi (d)/titolo:Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition/doi:10.1016%2Fj.mseb.2004.12.067/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2005/pagina_da:39/pagina_a:43/intervallo_pagine:39–43/volume:118 |
| بيانات النشر: | Elsevier BV, 2005. |
| سنة النشر: | 2005 |
| مصطلحات موضوعية: | Materials science, Field (physics), business.industry, Mechanical Engineering, Dielectric, Condensed Matter Physics, Lead zirconate titanate, Ferroelectricity, PLZT-PZT, Pulsed laser deposition, chemistry.chemical_compound, Amplitude, chemistry, Mechanics of Materials, Optoelectronics, General Materials Science, Radio frequency, Thin film, business, Dielectric properties-Films |
| الوصف: | Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers. |
| تدمد: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2004.12.067 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b353fb3008fee954a3ce82b43647b101 https://doi.org/10.1016/j.mseb.2004.12.067 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi.dedup.....b353fb3008fee954a3ce82b43647b101 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 09215107 |
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| DOI: | 10.1016/j.mseb.2004.12.067 |