Optical investigation of electrical spin injection into an inverted two-dimensional elctron gas structure

التفاصيل البيبلوغرافية
العنوان: Optical investigation of electrical spin injection into an inverted two-dimensional elctron gas structure
المؤلفون: Martin Oltscher, Mariusz Ciorga, Thomas Kuczmik, Dieter Weiss, Dieter Schuh, Christian Schüller, Christian H. Back, M. Buchner, Tobias Korn, Dominique Bougeard, Josef Loher
بيانات النشر: AMER PHYSICAL SOC, 2017.
سنة النشر: 2017
مصطلحات موضوعية: Materials science, Spin polarization, Condensed matter physics, QUANTUM-WELLS, ALXGA1-XAS ALLOYS, PERSISTENT PHOTOCONDUCTIVITY, RELAXATION ANISOTROPY, COULOMB DRAG, SEMICONDUCTOR, GAAS, FIELD, PHOTOLUMINESCENCE, DIFFUSION, ddc:530, Depolarization, Biasing, 02 engineering and technology, Zero field splitting, 021001 nanoscience & nanotechnology, Polarization (waves), 530 Physik, 01 natural sciences, Spin wave, 0103 physical sciences, Atomic physics, 010306 general physics, 0210 nano-technology, Fermi gas, Quantum tunnelling
الوصف: We report on electrical spin injection from (Ga,Mn)As into a high-mobility two-dimensional electron gas confined at an (Al,Ga)As/GaAs interface. Besides standard nonlocal electrical detection, we use a magneto-optical approach which provides cross-sectional images of the spin accumulation at the cleaved edge of the sample, yielding spin decay lengths on the order of $2\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{m}$. In some cases we find a nonmonotonic bias voltage dependence of the spin signal, which may be linked to ballistic tunneling effects during spin injection. We observe a clear Hanle depolarization using a technique which is free of dynamic nuclear polarization effects. Fitting the data with the standard drift-diffusion model of spin injection suggests averaged in-plane spin lifetimes on the order of 1 ns.
وصف الملف: application/pdf
اللغة: English
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af73327561f29bae9b65943424f90a30
https://epub.uni-regensburg.de/35055/
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....af73327561f29bae9b65943424f90a30
قاعدة البيانات: OpenAIRE