Investigation of charge transport properties of [1]Benzothieno[3,2-b][1]-benzothiophene single-crystals in field-effect transistor configuration
| العنوان: | Investigation of charge transport properties of [1]Benzothieno[3,2-b][1]-benzothiophene single-crystals in field-effect transistor configuration |
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| المؤلفون: | David Kreher, Fabrice Mathevet, Emmanuelle Lacaze, Clément Livache, Jean Charles Ribierre, Sébastien Sanaur, Lise-Marie Chamoreau, Xiao Liu, Lydia Sosa-Vargas, Xiaolu Su, Emmanuel Lhuillier |
| المساهمون: | Institut Parisien de Chimie Moléculaire (IPCM), Chimie Moléculaire de Paris Centre (FR 2769), Institut de Chimie du CNRS (INC)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris (ESPCI Paris), Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut de Chimie du CNRS (INC)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Ecole des Mines de Saint-Etienne (Institut Mines-Télécom (IMT)) (Mines Saint-Etienne ), Zhejiang University of Technology, China Scholarship Council, China, and the CNRS (PICS N°88085), European Project: 756225,blackQD, École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT) |
| المصدر: | Organic Electronics Organic Electronics, Elsevier, 2020, 78, pp.105605. ⟨10.1016/j.orgel.2019.105605⟩ Organic Electronics, 2020, 78, pp.105605. ⟨10.1016/j.orgel.2019.105605⟩ |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Diffraction, Electron mobility, Materials science, Scanning electron microscope, Analytical chemistry, 02 engineering and technology, Substrate (electronics), 010402 general chemistry, 01 natural sciences, law.invention, Biomaterials, chemistry.chemical_compound, Optical microscope, law, Materials Chemistry, Electrical and Electronic Engineering, Transistor, Benzothiophene, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, Field-effect transistor, 0210 nano-technology |
| الوصف: | International audience; Single-crystals of unsubstituted [1]Benzothieno[3,2-b][1]-benzothiophene (BTBT) were prepared by physical vapor transport deposition (VTP). The packing structure and morphology of the crystals were studied by X-ray diffraction (XRD), polarized optical microscopy (POM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The charge transport properties of BTBT single-crystals were also investigated via bottom contact/bottom gate (BC/BG) organic field-effect transistors (OFETs) on both SiO2 and n-octadecyltrichlorosilane (OTS) treated surfaces. A maximum hole mobility value of 0.032 cm2V−1s−1 was measured on the OTS substrate. In addition, single-crystal OFETs with ion gel top gate (TG) configuration were also investigated for low voltage operation. This work represents the first investigation of charge carrier mobility of a simple BTBT in transistor configuration and highlights the essential role of the BTBT substitution in charge transport properties. |
| تدمد: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2019.105605 |
| DOI: | 10.1016/j.orgel.2019.105605⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aef0c86a1ac5b5ef3e638274050f443a |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....aef0c86a1ac5b5ef3e638274050f443a |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15661199 |
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| DOI: | 10.1016/j.orgel.2019.105605 |