Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

التفاصيل البيبلوغرافية
العنوان: Active Control of Ferroelectric Switching Using Defect-Dipole Engineering
المؤلفون: Sang Mo Yang, Tae Heon Kim, Daesu Lee, Byung-Chul Jeon, Jong-Gul Yoon, Tae Won Noh, Yong Su Kim, Chang-Beom Eom, Seung Hyub Baek, Yeong Jae Shin
المصدر: Advanced Materials. 24:6490-6495
بيانات النشر: Wiley, 2012.
سنة النشر: 2012
مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, chemistry.chemical_element, Active control, Ferric Compounds, Ferroelectricity, Bismuth, Non-volatile memory, Condensed Matter::Materials Science, Dipole, Piezoresponse force microscopy, Multilevel data, Electricity, chemistry, Mechanics of Materials, Optoelectronics, General Materials Science, Polarization (electrochemistry), business
الوصف: Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage.
تدمد: 0935-9648
DOI: 10.1002/adma.201203101
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aaba4a334126e5dc06d6c425d19a50ca
https://doi.org/10.1002/adma.201203101
Rights: CLOSED
رقم الانضمام: edsair.doi.dedup.....aaba4a334126e5dc06d6c425d19a50ca
قاعدة البيانات: OpenAIRE
الوصف
تدمد:09359648
DOI:10.1002/adma.201203101