Nanoscale domain wall devices with magnetic tunnel junction read and write
| العنوان: | Nanoscale domain wall devices with magnetic tunnel junction read and write |
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| المؤلفون: | V. D. Nguyen, Bart Sorée, Dmitri E. Nikonov, Y. Canvel, Thibaut Devolder, Inge Asselberghs, Kevin Garello, Sebastien Couet, Danny Wan, A. Thiam, Laurent Souriau, Diana Tsvetanova, O. Bultynck, M. Heyns, Eline Raymenants, Ian A. Young, Iuliana Radu |
| المساهمون: | IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Intel Corporation [Hillsboro], Intel Corporation [USA] |
| المصدر: | Nature Electronics Nature Electronics, Springer Nature, 2021, 4 (6), pp.392-398. ⟨10.1038/s41928-021-00593-x⟩ Nature Electronics, 2021, 4 (6), pp.392-398. ⟨10.1038/s41928-021-00593-x⟩ |
| بيانات النشر: | HAL CCSD, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | DYNAMICS, Technology, Materials science, MOTION, Magnetoresistance, 02 engineering and technology, 01 natural sciences, Domain (software engineering), Engineering, 0103 physical sciences, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Instrumentation, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Science & Technology, Spintronics, business.industry, Reading (computer), Physics, Engineering, Electrical & Electronic, DRIVEN, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Magnetic field, Tunnel magnetoresistance, Domain wall (magnetism), SPINTRONICS, Optoelectronics, 0210 nano-technology, business, TORQUE, Engineering sciences. Technology |
| الوصف: | The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require external magnetic fields, or are based on conventional magnetic tunnel junctions (MTJs) that are not compatible with high-speed domain wall motion. Here we report domain wall devices based on perpendicular MTJs that offer electrical read and write, and fast domain wall motion via spin-orbit torque. The devices have a hybrid free layer design that consists of platinum/cobalt (Pt/Co) or a synthetic antiferromagnet (Pt/Co/Ru/Co) into the free layer of conventional MTJs. We show that our devices can achieve good tunnelling magnetoresistance readout and efficient spin-transfer torque writing that is comparable to current magnetic random-access memory technology, as well as domain wall depinning efficiency that is similar to stand-alone materials. We also show that a domain wall conduit based on a synthetic antiferromagnet offers the potential for reliable domain wall motion and faster write speed compared with a device based on Pt/Co. Domain wall devices based on perpendicular magnetic tunnel junctions with a hybrid free layer design can offer electrical read and write, and fast domain wall motion driven via spin-orbit torque. |
| اللغة: | English |
| تدمد: | 2520-1131 |
| DOI: | 10.1038/s41928-021-00593-x⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a920a9e5634dad18ff0e29515084be61 https://hal.archives-ouvertes.fr/hal-03272035 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....a920a9e5634dad18ff0e29515084be61 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 25201131 |
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| DOI: | 10.1038/s41928-021-00593-x⟩ |