Four-injector variability modeling of FinFET predictive technology models

التفاصيل البيبلوغرافية
العنوان: Four-injector variability modeling of FinFET predictive technology models
المؤلفون: Marisa Lopez-Vallejo, Pablo Royer, Carlos Lopez Barrio, Fernando Garcia Redondo
المصدر: 5th European Workshop on CMOS Variability (VARI 2014) | 5th European Workshop on CMOS Variability (VARI 2014) | 29/09/2014-01/10/2014 | Palma de Mallorca, Spain
Archivo Digital UPM
Universidad Politécnica de Madrid
بيانات النشر: E.T.S.I. Telecomunicación (UPM), 2014.
سنة النشر: 2014
مصطلحات موضوعية: 010302 applied physics, Engineering, Telecomunicaciones, business.industry, 020208 electrical & electronic engineering, Transistor, Semiconductor device modeling, 02 engineering and technology, Injector, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, law.invention, Threshold voltage, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrónica, business, Drain current, Leakage (electronics)
الوصف: The usual way of modeling variability using threshold voltage shift and drain current amplification is becoming inaccurate as new sources of variability appear in sub-22nm devices. In this work we apply the four-injector approach for variability modeling to the simulation of SRAMs with predictive technology models from 20nm down to 7nm nodes. We show that the SRAMs, designed following ITRS roadmap, present stability metrics higher by at least 20 % compared to a classical variability modeling approach. Speed estimation is also pessimistic, whereas leakage is underestimated if sub-threshold slope and DIBL mismatch and their correlations with threshold voltage are not considered.
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a78037b9666c4e65ce88def775d28781
https://oa.upm.es/36610/
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....a78037b9666c4e65ce88def775d28781
قاعدة البيانات: OpenAIRE