Characterization of Electrical Parameters of Cracked Crystalline Silicon Solar Cells in Photovoltaic Modules

التفاصيل البيبلوغرافية
العنوان: Characterization of Electrical Parameters of Cracked Crystalline Silicon Solar Cells in Photovoltaic Modules
المؤلفون: Marin Garaj, Sune Thorsteinsson, Rodrigo Del Prado Santamaria, Gisele Alves dos Reis Benatto, Sergiu Spataru, Adrian A. Santamaria Lancia, Peter Behrensdorff Poulsen
المصدر: Del Prado Santamaria, R, Dos Reis Benatto, G A, Lancia, A A S, Garaj, M, Thorsteinsson, S, Poulsen, P B & Spataru, S V 2021, Characterization of Electrical Parameters of Cracked Crystalline Silicon Solar Cells in Photovoltaic Modules . in Proceedings of 48 th IEEE Photovoltaic Specialists Conference . IEEE, pp. 0846-0853, 48 th IEEE Photovoltaic Specialists Conference, 20/06/2021 . https://doi.org/10.1109/PVSC43889.2021.9519081
بيانات النشر: IEEE, 2021.
سنة النشر: 2021
مصطلحات موضوعية: Materials science, Silicon, business.industry, Solar cell, Photovoltaic system, Photovoltaic modules, chemistry.chemical_element, I-V characterization, law.invention, Electroluminescence, chemistry, law, mental disorders, Curve fitting, Optoelectronics, Equivalent circuit, SDG 7 - Affordable and Clean Energy, Crystalline silicon, business, Cell cracks, Power loss, Short circuit, Diode
الوصف: In this work we investigate the characteristics of solar cells cracks in photovoltaic (PV) modules for understanding the extent to which the solar cell electrical parameters change due to cell crack degradation. The experimental investigation is performed on two custom nine-cell mini-modules of mono- and multi-crystalline silicon, respectively, where each solar cell in the module has a junction box, allowing individual and module level characterization. Results show that power loss caused by cell cracks is driven primarily by a reduction of the cell’s maximum power point current, in particular B type cracks. C cracks also affect the short circuit current of the cells, whereas cells with combined B and C cracks show the most reduction of the short circuit current. Equivalent circuit diode model curve fitting and analysis of the light or dark I-V curves proved of limited used in analyzing degradation of cracked cells, as the model assumptions break down. However, a comparative analysis of dark and light I-V curves with a Suns-V oc curve was better suited for understanding the evolution of diode parameters on cracked cells for increasing levels of degradation.
وصف الملف: application/pdf
DOI: 10.1109/pvsc43889.2021.9519081
DOI: 10.1109/PVSC43889.2021.9519081
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a57e571703dc9886cdb62e169ec812a0
https://doi.org/10.1109/pvsc43889.2021.9519081
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....a57e571703dc9886cdb62e169ec812a0
قاعدة البيانات: OpenAIRE
الوصف
DOI:10.1109/pvsc43889.2021.9519081