Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
| العنوان: | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
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| المؤلفون: | Mariadriana Creatore, Harm C. M. Knoops, Wilhelmus M. M. Kessels, Bart Macco, Wolfhard Beyer, Marcel A. Verheijen |
| المساهمون: | Plasma & Materials Processing, Interfaces in future energy technologies, Atomic scale processing, Processing of low-dimensional nanomaterials |
| المصدر: | Solar Energy Materials and Solar Cells Solar Energy Materials and Solar Cells, 173, 111-119. Elsevier Solar energy materials & solar cells 173, 111-119 (2017). doi:10.1016/j.solmat.2017.05.040 7th International Conference on Crystalline Silicon Photovoltaics, SiliconPV, Freiburg, GERMANY, 2017-04-03-2017-04-05 |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Spectroscopic ellipsometry, Electron mobility, Materials science, Hydrogen, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Zinc, Hydrogen doping, 7. Clean energy, 01 natural sciences, Atomic layer deposition, Transparent conductive oxide, Electrical resistivity and conductivity, Etching (microfabrication), Zinc oxide, 0103 physical sciences, ddc:530, SDG 7 - Affordable and Clean Energy, Transparent conducting film, 010302 applied physics, Renewable Energy, Sustainability and the Environment, business.industry, Doping, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Carrier mobility, 0210 nano-technology, business, SDG 7 – Betaalbare en schone energie |
| الوصف: | In this work, atomic layer deposition (ALD) has been employed to prepare high-mobility H-doped zinc oxide (ZnO:H) films. Hydrogen doping was achieved by interleaving the ZnO ALD cycles with H2 plasma treatments. It has been shown that doping with H 2 plasma offers key advantages over traditional doping by Al and B, and enables a high mobility value up to 47 cm 2 /Vs and a resistivity of 1.8 mΩcm. By proper choice of a deposition regime where there is a strong competition between film growth and film etching by the H2 plasma treatment, a strongly enhanced grain size and hence increased carrier mobility with respect to undoped ZnO can be obtained. The successful incorporation of a significant amount of H from the H 2 plasma has been demonstrated, and insights into the mobility-limiting scatter mechanisms have been obtained from temperature-dependent Hall measurements. A comparison with conventional TCOs has been made in terms of optoelectronic properties, and it has been shown that high-mobility ZnO:H has potential for use in various configurations of silicon heterojunction solar cells and silicon-perovskite tandem cells. |
| وصف الملف: | application/pdf |
| تدمد: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2017.05.040 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4b8fdeaa555d632aad871c10fa50d84 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....a4b8fdeaa555d632aad871c10fa50d84 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 09270248 |
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| DOI: | 10.1016/j.solmat.2017.05.040 |