Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation
| العنوان: | Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation |
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| المؤلفون: | Jean-Francois Lampin, Charbel Tannoury, M. Billet, Emilien Peytavit, Christophe Coinon |
| المساهمون: | Laboratoire de Physique des Lasers, Atomes et Molécules - UMR 8523 (PhLAM), Université de Lille-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), This work was supported by the French Defense Agency DGA (Direction générale de l'armement), RENATECH (French Network of Major Technology Centres), Lille University, and the ‘Région Hauts‐de‐France’., Renatech Network, PCMP CHOP, Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Photonique THz - IEMN (PHOTONIQUE THz - IEMN) |
| المصدر: | Electronics Letters Electronics Letters, IET, 2020, 56, pp.897-899. ⟨10.1049/el.2020.1116⟩ Electronics Letters, 2020, 56, pp.897-899. ⟨10.1049/el.2020.1116⟩ |
| بيانات النشر: | HAL CCSD, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | wavelength 1550.0 nm, Materials science, Annealing (metallurgy), 02 engineering and technology, Gallium arsenide, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], CW excitation, external quantum efficiency, 0202 electrical engineering, electronic engineering, information engineering, photoresponse, Electrical and Electronic Engineering, optical Fabry‐Perot cavity, III‐V semiconductors, subpicosecond carrier lifetime, carrier lifetime, business.industry, 020208 electrical & electronic engineering, GaAs, photoconducting materials, 1550‐nm‐wavelength illumination, temperature 450.0 degC, photoresponses, Carrier lifetime, gallium arsenide, post‐growth annealing temperature, chemistry, continuous‐wave, low‐temperature‐grown gallium arsenide photoconductors, Optoelectronics, Continuous wave, Quantum efficiency, annealing, business, Excitation |
| الوصف: | International audience; The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous-wave 1550-nm-wavelength illumination. It is achieved by using an optical Fabry-Pérot cavity in order to improve the external quantum efficiency and by decreasing the post-growth annealing temperature down-to 450°C. Introduction: Low-temperature-grown GaAs (LT-GaAs) photo-conductors have served as THz sources or detectors in time-domain THz spectroscopy systems based on Ti: Sa mode-locked lasers operating around 800 nm [1]. They have also been used as photoconductive switches to sample millimetre wave signals [2, 3], as optoelectronic homodyne mixers in CW THz spectroscopy systems [4] and also as optoelectronic heterodyne mixers in THz detectors [5, 6]. We have recently shown that LT-GaAs ultrafast photoconductors can operate at λ = 1550 nm, despite a photon energy E ph ≈ 0.75 eV, i.e. lower than the energy gap of GaAs (E g = 1.42 eV), by placing the LT-GaAs layer inside an optical resonant cavity [7]. This photoconductor has been then successfully used to sub-sample continuous waves at frequencies up to 300 GHz, demonstrating a sub-picosecond response time of photocurrents generated by 1550 nm illumination [8]. However, the much higher dark resistivity of LT-GaAs material (>10 3 kΩ cm) in comparison with LT-InGaAs/InAlAs multilayers material [9] or Fe-doped InGaAs layers [10] ( |
| اللغة: | English |
| تدمد: | 0013-5194 1350-911X |
| DOI: | 10.1049/el.2020.1116⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a25a6ff8cbedae1af1fba9749fc19284 https://hal.archives-ouvertes.fr/hal-02997766 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....a25a6ff8cbedae1af1fba9749fc19284 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 00135194 1350911X |
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| DOI: | 10.1049/el.2020.1116⟩ |