Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7-x

التفاصيل البيبلوغرافية
العنوان: Graphoepitaxy of CeO2 on MgO and its application to the fabrication of 45° grain boundary Josephson junctions of YBa2Cu3O7-x
المؤلفون: F. Sanchez, Jin Won Seo, Christoph Buchal, C. A. Copetti, Jürgen Schubert, M. Bauer, Willi Zander, Alexander M. Klushin, St. Bauer
المساهمون: Universitat de Barcelona
المصدر: Dipòsit Digital de la UB
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname
بيانات النشر: American Institute of Physics, 1995.
سنة النشر: 1995
مصطلحات موضوعية: Josephson effect, Microscòpia electrònica d'escombratge, Pel·lícules fines, Fabrication, Materials science, business.industry, Creixement cristal·lí, Aparells electrònics, Thin films, General Physics and Astronomy, Nanotechnology, Substrate (electronics), Epitaxy, Surface roughness, Optoelectronics, Grain boundary, Crystal growth, Electronic apparatus and appliances, Superconductors, business, High-resolution transmission electron microscopy, Layer (electronics), Scanning electron microscopy
الوصف: We communicate a detailed study of the epitaxial growth of CeOz on MgO. The key feature of the growth is the dependence of the in-plane orientation of the Ce02 epitaxial layer on the MgO surface morphology. Atomic force microscopic (APM) measurements, x-ray analyses, as well as high-resolution transmission electron microscopy (HRTEM) investigations reveal that on rough substrates a cube-on-cube growth of Ce02 on MgO occurs while on smooth substrates the CeO, unit cell is rotated around the surface normal by 45” with respect to the MgO unit cell when the deposition rate is low (-0.3 A/s) during the first stages of growth. This growth mechanism can be used for a defined fabrication of 45” grain boundaries in the CeO, layer by controlling the surface roughness of the MgO substrate. This report demonstrates that these 45” grain boundaries may be used to fabricate YBazCus07-, Josephson junctions. 0 1995 American Institute of Physics.
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a02f3ebfb0fef3b1f547b36f60a9b7f6
http://hdl.handle.net/2445/24790
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....a02f3ebfb0fef3b1f547b36f60a9b7f6
قاعدة البيانات: OpenAIRE