Thermal properties study of silicon nanostructures by photoacoustic techniques
| العنوان: | Thermal properties study of silicon nanostructures by photoacoustic techniques |
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| المؤلفون: | Fabrice Lemoine, Guillaume Castanet, Konstantinos Termentzidis, Vladimir Lysenko, Mykola Isaiev, K. Dubyk, Tetyana Nychyporuk, David Lacroix |
| المساهمون: | Taras Shevchenko National University of Kyiv, Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Formation, élaboration de nanomatériaux et cristaux (FENNEC), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Centre d'Energétique et de Thermique de Lyon (CETHIL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Laboratoire d'Energétique et de Mécanique Théorique Appliquée (LEMTA ), Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), INL - Photovoltaïque (INL - PV), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon, Laboratoire Énergies et Mécanique Théorique et Appliquée (LEMTA ), 'Features of photothermal and photoacoustic processes in low-dimensional silicon-based semiconductor systems' (Ministry of Education and Science of Ukraine, State Registration Number 0118U000242), project HotLine (Agence nationale de la recherche, France, project number ANR-19-CE09-0003)., CNRS Energy unit (PEPS Cellule ENERGIE 2019) through the project Im-HESurNaASA, Scientific pole EMPP of University of Lorraine., ANR-19-CE09-0003,HotLiNe,Transport de chaleur aux interfaces et configurations nanometriques liquide/solide(2019), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL) |
| المصدر: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2020, 127 (22), pp.225101. ⟨10.1063/5.0007559⟩ Journal of Applied Physics, American Institute of Physics, 2020, 127, ⟨10.1063/5.0007559⟩ |
| بيانات النشر: | HAL CCSD, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Thin films, Transducers, Nanowire, General Physics and Astronomy, FOS: Physical sciences, 02 engineering and technology, Applied Physics (physics.app-ph), Heat sink, Porous silicon, 01 natural sciences, Heat capacity, [SPI.MAT]Engineering Sciences [physics]/Materials, Thermodynamic properties, Thermal conductivity, Semiconductor nanostructures, 0103 physical sciences, Thermal, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Composite material, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Porosity, 010302 applied physics, Physics, [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Nanowires, thermal properties, Materials Science (cond-mat.mtrl-sci), Physics - Applied Physics, Computer simulation, 021001 nanoscience & nanotechnology, silicon nanowires arrays, porous silicon, Etching, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.MECA.THER]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Thermics [physics.class-ph], Photoacoustic Techniques, 0210 nano-technology, Materials properties, Scanning electron microscopy, piezoelectric detection, photoacoustic effect |
| الوصف: | International audience; The photoacoustic method with piezoelectric detection for the simultaneous evaluation of the thermophysical properties is proposed. The approach is based on the settling of an additional heat sink for redistribution of heat fluxes deposited on the sample surface. Firstly, the approach was tested on the porous silicon with welldefined morphology and well-studied properties. Then, heat capacity and thermal conductivity of silicon nanowires arrays have been investigated by recovering the experimental data through numerical simulations. The decrease of heat capacity and effective thermal conductivity of the samples upon increasing thickness and porosity of the sample is observed. Such behavior could be caused by the increase of the structure heterogeneity. In particular, this can be related to larger disorder (increased density of broken nanowires and larger porosity) that appears during the etching process of the thick layers. |
| اللغة: | English |
| تدمد: | 0021-8979 1089-7550 |
| DOI: | 10.1063/5.0007559⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95e46ee0396947b6dc1d7389bc1b37bd https://hal.archives-ouvertes.fr/hal-02861230 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....95e46ee0396947b6dc1d7389bc1b37bd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 00218979 10897550 |
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| DOI: | 10.1063/5.0007559⟩ |