التفاصيل البيبلوغرافية
العنوان: |
Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB |
المؤلفون: |
Quentin Smets, Tom Schram, Devin Verreck, Daire Cott, Benjamin Groven, Zubair Ahmed, Ben Kaczer, Jerome Mitard, Xiangyu Wu, Souvik Kundu, Hans Mertens, Dunja Radisic, Arame Thiam, Waikin Li, Emmanuel Dupuy, Zheng Tao, Kevin Vandersmissen, Thibaut Maurice, Dennis Lin, Pierre Morin, Inge Asselberghs, Iuliana Radu |
المصدر: |
2021 IEEE International Electron Devices Meeting (IEDM) |
بيانات النشر: |
IEEE, 2021. |
سنة النشر: |
2021 |
ردمك: |
978-1-66542-572-8 |
DOI: |
10.1109/iedm19574.2021.9720517 |
URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::918faa104e7bdd0bf709a2f04f69ed2d https://doi.org/10.1109/iedm19574.2021.9720517 |
Rights: |
CLOSED |
رقم الانضمام: |
edsair.doi.dedup.....918faa104e7bdd0bf709a2f04f69ed2d |
قاعدة البيانات: |
OpenAIRE |