Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

التفاصيل البيبلوغرافية
العنوان: Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB
المؤلفون: Quentin Smets, Tom Schram, Devin Verreck, Daire Cott, Benjamin Groven, Zubair Ahmed, Ben Kaczer, Jerome Mitard, Xiangyu Wu, Souvik Kundu, Hans Mertens, Dunja Radisic, Arame Thiam, Waikin Li, Emmanuel Dupuy, Zheng Tao, Kevin Vandersmissen, Thibaut Maurice, Dennis Lin, Pierre Morin, Inge Asselberghs, Iuliana Radu
المصدر: 2021 IEEE International Electron Devices Meeting (IEDM)
بيانات النشر: IEEE, 2021.
سنة النشر: 2021
ردمك: 978-1-66542-572-8
DOI: 10.1109/iedm19574.2021.9720517
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::918faa104e7bdd0bf709a2f04f69ed2d
https://doi.org/10.1109/iedm19574.2021.9720517
Rights: CLOSED
رقم الانضمام: edsair.doi.dedup.....918faa104e7bdd0bf709a2f04f69ed2d
قاعدة البيانات: OpenAIRE
الوصف
ردمك:9781665425728
DOI:10.1109/iedm19574.2021.9720517