Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

التفاصيل البيبلوغرافية
العنوان: Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
المؤلفون: J.-M. Lentali, Nathan G. Young, Jacques Peretti, Marcel Filoche, Shuji Nakamura, W. Hahn, Claude Weisbuch, Yuh-Renn Wu, Marco Piccardo, P. Polovodov, James S. Speck, Y. Lassailly, Lucio Martinelli, F. Maroun
المساهمون: Institut Pluridisciplinaire Hubert Curien (IPHC), Université de Strasbourg (UNISTRA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Genewave, private, Laboratoire de physique de la matière condensée (LPMC), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)
المصدر: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (4), ⟨10.1103/PhysRevB.98.045305⟩
Physical Review B: Condensed Matter and Materials Physics
Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2018, 98 (4), ⟨10.1103/PhysRevB.98.045305⟩
بيانات النشر: HAL CCSD, 2018.
سنة النشر: 2018
مصطلحات موضوعية: Anderson localization, Materials science, FOS: Physical sciences, 02 engineering and technology, Electron, 01 natural sciences, [SDV.MHEP.PSR]Life Sciences [q-bio]/Human health and pathology/Pulmonology and respiratory tract, law.invention, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Emission spectrum, [PHYS.COND.CM-DS-NN]Physics [physics]/Condensed Matter [cond-mat]/Disordered Systems and Neural Networks [cond-mat.dis-nn], 010306 general physics, Spectroscopy, Quantum well, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS, Condensed Matter - Materials Science, Condensed matter physics, Condensed Matter - Mesoscale and Nanoscale Physics, Materials Science (cond-mat.mtrl-sci), Disordered Systems and Neural Networks (cond-mat.dis-nn), Condensed Matter - Disordered Systems and Neural Networks, 021001 nanoscience & nanotechnology, 3. Good health, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Scanning tunneling microscope, 0210 nano-technology, Luminescence, [PHYS.COND.CM-SCM]Physics [physics]/Condensed Matter [cond-mat]/Soft Condensed Matter [cond-mat.soft]
الوصف: We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electro-luminescence spectra of InGaN/GaN quantum well structures.
5 pages, 5 figures + supplemental material (1 page, 1 figure)
اللغة: English
تدمد: 1098-0121
1550-235X
DOI: 10.1103/PhysRevB.98.045305⟩
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::840ea0801f444ecdbac776f288acaabc
https://hal.archives-ouvertes.fr/hal-02324900
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....840ea0801f444ecdbac776f288acaabc
قاعدة البيانات: OpenAIRE
الوصف
تدمد:10980121
1550235X
DOI:10.1103/PhysRevB.98.045305⟩