Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells
| العنوان: | Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells |
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| المؤلفون: | Stanislav M. Dzyadukh, S. A. Dvoretsky, A. V. Voitsekhovskii, I. I. Izhnin, Sergey N. Nesmelov, Ihor I. Syvorotka, N. N. Mikhailov |
| المصدر: | Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494 |
| بيانات النشر: | Springer Science and Business Media LLC, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Admittance, Materials Science (miscellaneous), Capacitive sensing, структура металл - диэлектрик - полупроводник, Nanochemistry, молекулярно-лучевая эпитаксия, 02 engineering and technology, 010402 general chemistry, Epitaxy, одиночные квантовые ямы, 01 natural sciences, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, Quantum well, адмиттанс, business.industry, Cell Biology, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Optoelectronics, Charge carrier, МДП-структуры, 0210 nano-technology, business, Biotechnology, Molecular beam epitaxy, Voltage |
| الوصف: | For the first time, the electrical characteristics of the metal–insulator–semiconductor (MIS) structures based on n(p)-Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were investigated. SQW significantly influences the voltage, frequency, and temperature dependencies of the admittance of the MIS structure. When the SQW thickness is less than the critical thickness, there are numerous sharp maxima in the capacitance–voltage (C–V) curve, and when the thickness of the well is close to the critical thickness, a wide maximum is observed in the C–V characteristics associated with overshoot of minority charge carriers from SQW. A distinction is revealed between the effect of radiation on capacitive maxima caused by the escape of charge carriers from SQW and the recharging of deep levels in the epitaxial film bulk. |
| وصف الملف: | application/pdf |
| تدمد: | 2190-5517 2190-5509 |
| DOI: | 10.1007/s13204-019-01081-7 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f16b96f50d993af2621db748dc440e7 https://doi.org/10.1007/s13204-019-01081-7 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....7f16b96f50d993af2621db748dc440e7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21905517 21905509 |
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| DOI: | 10.1007/s13204-019-01081-7 |