Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz

التفاصيل البيبلوغرافية
العنوان: Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz
المؤلفون: Vassil Palankovski, Dirk Wiegner, S. Vitanov, Stephan Maroldt, Rudiger Quay, Oliver Ambacher
المساهمون: Publica
المصدر: IEICE Transactions on Electronics. :1238-1244
بيانات النشر: Institute of Electronics, Information and Communications Engineers (IEICE), 2010.
سنة النشر: 2010
مصطلحات موضوعية: Materials science, business.industry, power amplifier, Amplifier, Transistor, Electrical engineering, Linearity, Gallium nitride, High-electron-mobility transistor, switch-mode, Electronic, Optical and Magnetic Materials, Power (physics), law.invention, chemistry.chemical_compound, chemistry, efficiency, law, Gigabit, Optoelectronics, Electrical and Electronic Engineering, gallium nitride, business, Monolithic microwave integrated circuit
الوصف: SUMMARY This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode classD (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equivalent to 2 GHz RF-operation. The device needs for switch-mode operation are derived and verified by MMIC results in class-S and class-D operation. To the authors’ knowledge, this is the first time 2 GHz-equivalent digital-switchmode RF-operation is demonstrated with GaN HEMTs with high efficiency.
تدمد: 1745-1353
0916-8524
DOI: 10.1587/transele.e93.c.1238
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bf3b69119b0d8102ab13d062c3bda95
https://doi.org/10.1587/transele.e93.c.1238
رقم الانضمام: edsair.doi.dedup.....7bf3b69119b0d8102ab13d062c3bda95
قاعدة البيانات: OpenAIRE
الوصف
تدمد:17451353
09168524
DOI:10.1587/transele.e93.c.1238