التفاصيل البيبلوغرافية
| العنوان: |
Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing |
| المؤلفون: |
Marcello Campione, Hrvoje Zorc, Nikola Radić, Ivana Kovačević, Branko Pivac, P. Dubček, Adele Sassella, Sigrid Bernstorff |
| المساهمون: |
Kovacevic, I, Pivac, B, Dubcek, P, Zorc, H, Radic, N, Bernstorff, S, Campione, M, Sassella, A |
| المصدر: |
Applied Surface Science |
| سنة النشر: |
2007 |
| مصطلحات موضوعية: |
Nanostructure, Annealing (metallurgy), Ultra-high vacuum, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Germanium, 02 engineering and technology, Activation energy, 01 natural sciences, Vacuum evaporation, 0103 physical sciences, 010302 applied physics, atomic force microscopy, Chemistry, Physics, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, X-ray reflectivity, Crystallography, FIS/01 - FISICA SPERIMENTALE, Grazing-incidence small-angle scattering, Ge nanostructures, Ge islands, Atomic force microscopy, 0210 nano-technology, Germanium island, annealing effects |
| الوصف: |
We have deposited a 12 nm thick Ge layer on Si(1 0 0) held at 200 °C by thermal evaporation under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self-assembled growth of nanostructural Ge islands on the Ge layer occurred. Atomic force microscopy (AFM) and grazing incidence small-angle X-ray scattering (GISAXS) were used to characterize such layers. GISAXS measurements evidenced the formation of cylinder shaped structures upon annealing at 700 °C, which was confirmed by AFM measurements with a very sharp tip. A Ge mass transport from the layer to the islands was inferred by X-ray reflectivity and an activation energy of 0.40 ± 0.10 eV for such a process was calculated. © 2006 Elsevier B.V. All rights reserved. |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::772d17cac98ba53bc8ed0bdf275605bd
https://www.bib.irb.hr/298258 |
| Rights: |
CLOSED |
| رقم الانضمام: |
edsair.doi.dedup.....772d17cac98ba53bc8ed0bdf275605bd |
| قاعدة البيانات: |
OpenAIRE |