التفاصيل البيبلوغرافية
| العنوان: |
Drain current computation in nanoscale nMOSFETs: Comparison of transport models |
| المؤلفون: |
Giorgio Baccarani, Binjie Cheng, Antonio Martinez, Claire Fenouillet-Beranger, Luca Selmi, Bogdan Majkusiak, Stephane Monfray, Philippe Dollfus, Craig Alexander, Aniello Esposito, Giuseppe Iannaccone, Andreas Schenk, P. Toniutti, Arnaud Bournel, Marco Braccioli, V. Aubry-Fortuna, V. Peikert, Gianluca Fiori, Claudio Fiegna, Jérôme Saint-Martin, Pierpaolo Palestri, L. Silvestri, J. Walczak, A. Ghetti, Enrico Sangiorgi, Craig Riddet, Susanna Reggiani, Asen Asenov, David Esseni |
| المساهمون: |
Sangiorgi E., Alexander C., Asenov A., Aubry-Fortuna V., Baccarani G., Bournel A., Braccioli M., Cheng B., Dollfus P., Esposito A., Esseni D., Fenouillet-Beranger C., Fiegna C., Fiori G., Ghetti A., Iannaccone G., Martinez A., Majkusiak B., Monfray S., Palestri P., Peikert V., Reggiani S., Riddet C., Saint-Martin J., Schenk A., Selmi L., Silvestri L., Toniutti P., Walczak J. |
| سنة النشر: |
2010 |
| مصطلحات موضوعية: |
010302 applied physics, Materials science, business.industry, Computation, Capacitive sensing, Silicon on insulator, Ranging, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Boltzmann equation, 0103 physical sciences, MOSFET, Electronic engineering, Optoelectronics, Microelectronics, 0210 nano-technology, business |
| الوصف: |
In this paper the modelling approaches for determination of the drain current in nanoscale MOSFETs pursued by various partners in the frame of the European Projects Pullnano and Nanosil are mutually compared in terms of drain current and internal quantities (average velocity and inversion charge). The comparison has been carried out by simulating template devices representative of 22 nm Double-Gate and 32 nm Single-Gate FD-SOI. A large variety of simulation models has been considered, ranging from drift-diffusion to direct solutions of the Boltzmann- Transport-Equation. The predictions of the different approaches for the 32 nm device are quite similar. Simulations of the 22 nm device instead, are much less consistent. Comparison with experimental data for a 32 nm device shows that the modeling approach used to explain the mobility reduction induced by the high-k dielectric is critical. |
| وصف الملف: |
STAMPA |
| DOI: |
10.1109/MIEL.2010.5490539 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67120d02191c2e3911d748a9bb87d886 |
| Rights: |
OPEN |
| رقم الانضمام: |
edsair.doi.dedup.....67120d02191c2e3911d748a9bb87d886 |
| قاعدة البيانات: |
OpenAIRE |