التفاصيل البيبلوغرافية
| العنوان: |
p+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications |
| المؤلفون: |
Jens Hibner, Robby Peibst, Michael Oestreich, Michael Rienäcker, Raphael Niepelt, Christina Klamt, Tobias Wietler, Thorsten Dullweber, Eduard Sauter, Byungsul Min, Rolf Brendel |
| المصدر: |
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) |
| بيانات النشر: |
IEEE |
| مصطلحات موضوعية: |
010302 applied physics, Materials science, Tandem, Silicon, Tandem cell, Analytical chemistry, Oxide, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, chemistry.chemical_compound, chemistry, 0103 physical sciences, Junction formation, 0210 nano-technology, Quantum tunnelling |
| الوصف: |
We present a novel cell concept that combines the tandem cell approach with the PERC mainstream technology. As an interface between Si bottom and top cell, we utilize passivating $\text{n}^{\mathbf {+}}$-type polysilicon on oxide (POLO) contacts and a p+ poly-Si / n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process $^{\mathbf {sequence\, where\, the\, POCl}}$3$^{\mathbf {-diffusion\, and\, SiN}} \mathbf {x}$deposition are replaced by the POLO junction formation processes. The implied $^{\mathbf {open\, circuit\, voltage\, iV}} \mathbf {oc}$ measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum), respectively. |
| اللغة: |
English |
| ردمك: |
978-1-5386-8529-7 |
| DOI: |
10.1109/pvsc.2018.8548032 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d782f4656730bc65c3d974a215819f8 |
| رقم الانضمام: |
edsair.doi.dedup.....5d782f4656730bc65c3d974a215819f8 |
| قاعدة البيانات: |
OpenAIRE |