Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents
| العنوان: | Investigation of luminescence centers inside InGaN/GaN multiple quantum well over a wide range of temperature and injection currents |
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| المؤلفون: | Neslihan Ayarcı Kuruoğlu, Orhan Özdemir, Kutsal Bozkurt, Hanife Baş, Bandar Alshehri, Karim Dogheche, Elhadj Dogheche |
| المساهمون: | Yildiz Technical University (YTU), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Optoélectronique - IEMN (OPTO - IEMN), INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), This work was supported by a Research Fund of the Yıldız Technical University under contract numbers FBA-2022-4983, FBA-2021-4559 and FDK-2019-3525. We are grateful to Prof. Dr. Ayşe Erol and her team for performing photoluminescence measurements., The authors have not disclosed any funding. |
| المصدر: | Journal of Materials Science: Materials in Electronics Journal of Materials Science: Materials in Electronics, 2022, 33, pp.19151-19159. ⟨10.1007/s10854-022-08752-2⟩ |
| بيانات النشر: | HAL CCSD, 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
| الوصف: | International audience; InGaN/GaN multiple quantum well-based light-emitting diode LEDs were investigated over a wide range of injection currents (0.04 mA–0.1 A) and temperature (80–370 K)-dependent electroluminescence EL measurements. Two centers were identified for blue luminescence peaking at 2.9 eV and 3.0 eV, denoted as BL2 and BLC, respectively. Although the 3.0 eV center was more effective than 2.9 eV under low temperature (below 160 K), both vanished completely above 170 K due to the activation of non-radiative recombination under a low-current injection regime. At the same time, EL signal intensity was significantly reduced at a high-current injection regime. The recombination through a point trap in GaN barrier layer (known as H1 trap) in InGaN/GaN multi-quantum well structure was non-radiative recombination process: this leads to either vanishing or weakening of 3.0 eV center and its energy depth were determined as 0.9 eV through temperature-dependent dc current–voltage (I–V) and ac capacitance–temperature–frequency (C–T–ω) measurements. The trap depth, thermal quenching of the peak at 3.0 eV, and the sole presence of a peak at 2.9 eV at high temperature might be ascribed to carbon-related defects and agreed with recent theoretical and experimental works in literature. |
| اللغة: | English |
| تدمد: | 0957-4522 1573-482X |
| DOI: | 10.1007/s10854-022-08752-2⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d3ac1821f3e2d6c5eed9554a95cca38 https://hal.science/hal-03741985 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi.dedup.....5d3ac1821f3e2d6c5eed9554a95cca38 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 09574522 1573482X |
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| DOI: | 10.1007/s10854-022-08752-2⟩ |