Development and adhesion characterization of a silicon wafer for temporary bonding
العنوان: | Development and adhesion characterization of a silicon wafer for temporary bonding |
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المؤلفون: | M. Pellat, J. Thooris, G. Enyedi, Frank Fournel, Pierre Montmeat, T. Enot |
المساهمون: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) |
المصدر: | International Journal of Adhesion and Adhesives International Journal of Adhesion and Adhesives, Elsevier, 2018, 82, pp.100-107. ⟨10.1016/j.ijadhadh.2018.01.007⟩ International Journal of Adhesion and Adhesives, 2018, 82, pp.100-107. ⟨10.1016/j.ijadhadh.2018.01.007⟩ |
بيانات النشر: | Elsevier BV, 2018. |
سنة النشر: | 2018 |
مصطلحات موضوعية: | 010302 applied physics, chemistry.chemical_classification, Thermoplastic, Materials science, Polymers and Plastics, Silicon, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, engineering.material, 021001 nanoscience & nanotechnology, 01 natural sciences, Biomaterials, [SPI]Engineering Sciences [physics], chemistry, Coating, Chemical-mechanical planarization, 0103 physical sciences, engineering, Wafer, Adhesive, Composite material, 0210 nano-technology, Silicon oxide, Layer (electronics) |
الوصف: | International audience; The development of a silicon temporary carrier for thin wafer handling for 3D applications was investigated. Process selection and optimization ended up with a silicon carrier entirely covered with an antistick layer based on a fluorinated polymer. The carrier preparation was quite easy because only one coating was used and no sticking edge zone was needed onto the carrier. The fluorinated coating led to a very hydrophobic behavior. When bonded with a thermoplastic glue, it also exhibited very antiadhesive properties because the adherence was as low as 0.4 J/m(2) and lower than the adherence of a stack without any antiadhesive layer (above 4 J/m(2)). The carrier was nevertheless suitable for different back side processes in 300 mm grinding, chemical cleaning, chemical mechanical polishing and silicon oxide deposition. Compared with a commercial carrier, it exhibited the same level of performance for the integration. The proposed carrier was compatible with a mechanical debonding of a thinned bonded structure with a silicon device wafer of 80 pm. The carrier recycling was possible without any new preparation. |
تدمد: | 0143-7496 |
DOI: | 10.1016/j.ijadhadh.2018.01.007 |
DOI: | 10.1016/j.ijadhadh.2018.01.007⟩ |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5580a8b9879d5fab11cfa1ff4c51febd https://doi.org/10.1016/j.ijadhadh.2018.01.007 |
Rights: | CLOSED |
رقم الانضمام: | edsair.doi.dedup.....5580a8b9879d5fab11cfa1ff4c51febd |
قاعدة البيانات: | OpenAIRE |
تدمد: | 01437496 |
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DOI: | 10.1016/j.ijadhadh.2018.01.007 |