Photoluminescence spectroscopy of CdTe epilayers grown by rf magnetron sputtering
| العنوان: | Photoluminescence spectroscopy of CdTe epilayers grown by rf magnetron sputtering |
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| المؤلفون: | N. L. Rowell, J. G. Cook, M. S. Aouadi, S. R. Das |
| المصدر: | Journal of Applied Physics. 68:5796-5803 |
| بيانات النشر: | AIP Publishing, 1990. |
| سنة النشر: | 1990 |
| مصطلحات موضوعية: | Photoluminescence, Chemistry, business.industry, Analytical chemistry, General Physics and Astronomy, Substrate (electronics), Sputter deposition, Epitaxy, Crystallographic defect, Optics, Sputtering, Crystallite, business, Spectroscopy |
| الوصف: | Photoluminescence spectra are measured for sputter‐deposited, heteroepitaxial (100)CdTe layers of thicknesses up to 14 μm grown on (100)KBr substrates. Three emission bands, at 0.81, 1.00, and 1.41 eV, are observed. From comparison of the photoluminescence spectra of the epilayers with those of several bulk single‐crystal and polycrystalline samples, the origin of the 1.41‐eV band, reported previously by many workers, is correlated to structural defects arising from lattice mismatch with the substrate. It is concluded that the 0.81‐ and 1.00‐eV bands are due to defect levels resulting from nonstoichiometric growth. The injection level and temperature dependence of the photoluminescence suggest that the 1.41‐ and 0.81‐eV emissions are donor‐acceptor transitions whereas the 1.00‐ eV emission is a conduction‐band‐acceptor transition. |
| تدمد: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.346950 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d859d9f07915293fc498572fd1daaa5 https://doi.org/10.1063/1.346950 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi.dedup.....4d859d9f07915293fc498572fd1daaa5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10897550 00218979 |
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| DOI: | 10.1063/1.346950 |