Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure
| العنوان: | Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure |
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| المؤلفون: | Shoma Yokoyama, Hiroyuki Uchida, Ayaki Takeda, Nobuaki Takebayashi, Shoji Kawahito, Hideaki Matsumura, Yusuke Nishioka, Keigo Yarita, Syunta Nakanishi, Takeshi Go Tsuru, Takaaki Tanaka, Koji Mori, Hiroki Kamehama, Yoshio Arai, Kouichi Hagino, Hideki Hayashi, Kousuke Negishi, Keiichiro Kagawa, Ikuo Kurachi, Katsuhiro Tachibana, Keita Yasutomi, Sodai Harada, Sumeet Shrestha, Kenji Oono, Kohei Fukuda, Takayoshi Kohmura |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Physics, Nuclear and High Energy Physics, CMOS sensor, Pixel, 010308 nuclear & particles physics, business.industry, Physics::Instrumentation and Detectors, X-ray detector, FOS: Physical sciences, Silicon on insulator, 01 natural sciences, Noise (electronics), 030218 nuclear medicine & medical imaging, 03 medical and health sciences, Full width at half maximum, 0302 clinical medicine, Interference (communication), 0103 physical sciences, Optoelectronics, business, Astrophysics - Instrumentation and Methods for Astrophysics, Instrumentation and Methods for Astrophysics (astro-ph.IM), Instrumentation, Diode |
| الوصف: | We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, "XRPIX6E" equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts as a shield layer. XRPIX6E exhibits improved spectral performances both in the Event-Driven readout mode and in the Frame readout mode in comparison to previous devices. The energy resolutions in full width at half maximum at 6.4 keV are 236 $\pm$ 1 eV and 335 $\pm$ 4 eV in the Frame and Event-Driven readout modes, respectively. There are differences between the readout noise and the spectral performance in the two modes, which suggests that some mechanism still degrades the performance in the Event-Driven readout mode. 13 pages, 5 figures, 1 table, accepted for publication in NIMA on September 27, 2018 |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44e73e77116c823e413c2dbf06657f0a http://arxiv.org/abs/1809.10425 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....44e73e77116c823e413c2dbf06657f0a |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |