Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
| العنوان: | Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell |
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| المؤلفون: | Lin Guijiang, Liu Guanzhou, Li Mingyang, Li Senlin, Yang Meijia, Song Minghui, Changqing Chen, Wu Chaoyu, Chen Wenjun, Wang Duxiang, Bi Jingfeng, Xiong Weiping, Yang Li, Yanyan Fang |
| المصدر: | Nanoscale Research Letters |
| بيانات النشر: | Springer Science and Business Media LLC, 2015. |
| سنة النشر: | 2015 |
| مصطلحات موضوعية: | Materials science, Nano Express, Strain reducing layer, business.industry, Open-circuit voltage, Band gap, Triple junction, Energy conversion efficiency, Nanochemistry, Nanotechnology, InAs quantum dots, Condensed Matter Physics, Suns in alchemy, Metal organic chemical vapor deposition, law.invention, Materials Science(all), Triple junction solar cell, Quantum dot, law, Solar cell, Optoelectronics, General Materials Science, business |
| الوصف: | The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley–Read–Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots. |
| تدمد: | 1556-276X 1931-7573 |
| DOI: | 10.1186/s11671-015-0821-7 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::331b13c39a0d10beed13157ba6e76176 https://doi.org/10.1186/s11671-015-0821-7 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....331b13c39a0d10beed13157ba6e76176 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1556276X 19317573 |
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| DOI: | 10.1186/s11671-015-0821-7 |