A novel photodetector based on the interface coupling effect in silicon-on-insulator MOSFETs
| العنوان: | A novel photodetector based on the interface coupling effect in silicon-on-insulator MOSFETs |
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| المؤلفون: | Jing Wan, Br. Lu, J N. Deng, Jinhai Shao, Sorin Cristoloveanu, Yifang Chen, Alexander Zaslavsky, Maryline Bawedin |
| المساهمون: | Fudan University, School of Information Science and Engineering, School of Engineering (Brown Engineering), Brown University, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) |
| المصدر: | 2017 S3S Proceedings 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.4.4, ⟨10.1109/S3S.2017.8309231⟩ |
| بيانات النشر: | IEEE, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Interface (computing), Silicon on insulator, Photodetector, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Responsivity, 020210 optoelectronics & photonics, Coupling effect, 0103 physical sciences, MOSFET, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Hardware_LOGICDESIGN |
| الوصف: | session: Advanced SOI devices 1; International audience; We report a novel CMOS-compatible photodetector with record responsivity built on a silicon-on-insulator (SOI) substrate. The operating mechanism is based on in the interface coupling effect in the SOI MOSFET, as confirmed by both TCAD simulations and experimental measurements on a prototype device fabricated using a simplified process flow. |
| DOI: | 10.1109/s3s.2017.8309231 |
| DOI: | 10.1109/S3S.2017.8309231⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d6e6586c92ed6d7a1ac84faf8e7bf5b https://doi.org/10.1109/s3s.2017.8309231 |
| رقم الانضمام: | edsair.doi.dedup.....2d6e6586c92ed6d7a1ac84faf8e7bf5b |
| قاعدة البيانات: | OpenAIRE |
| DOI: | 10.1109/s3s.2017.8309231 |
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