Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors

التفاصيل البيبلوغرافية
العنوان: Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors
المؤلفون: Shih-Jye Sun, Miroslav Menšík, Chimed Ganzorig, Petr Toman, Jiří Pfleger
المصدر: Physical Chemistry Chemical Physics. 24:25999-26010
بيانات النشر: Royal Society of Chemistry (RSC), 2022.
سنة النشر: 2022
مصطلحات موضوعية: General Physics and Astronomy, Physical and Theoretical Chemistry
الوصف: We have theoretically investigated the feasibility of constructing a spintronic field-effect transistor with the active channel made of a polymer chain with the antiferromagnetic coupling oriented in the source-to-drain direction. We found two different device function regimes controlling the on-chain spin-charge carrier density by tuning the gate voltage. At higher charge carrier densities, the source-drain current linearly increases with decreasing charge carrier densities. In this regime, no polymer spin-polarized current is observed. Upon reaching a critical gate voltage, the current decreases with decreasing charge densities. It is accompanied by the formation of spin-polarized current, generated by an on-chain process, which can be related to spin-charge spatial distribution symmetry breaking caused either by an application of the source-to-drain voltage (higher spin polarization near the drain), or the breakdown of the Peierls dimerization near chain ends. Numerical simulation of the transistor characteristics suggests that the design of a polymer spintronic field-effect transistor is in principle feasible.
تدمد: 1463-9084
1463-9076
DOI: 10.1039/d2cp03119a
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22337db33d75951be8721b9e1db4c593
https://doi.org/10.1039/d2cp03119a
Rights: CLOSED
رقم الانضمام: edsair.doi.dedup.....22337db33d75951be8721b9e1db4c593
قاعدة البيانات: OpenAIRE
الوصف
تدمد:14639084
14639076
DOI:10.1039/d2cp03119a