III-V nanowires with quantum dots: MBE growth and properties
| العنوان: | III-V nanowires with quantum dots: MBE growth and properties |
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| المؤلفون: | V O Gridchin, K. P. Kotlyar, G. E. Cirlin, A. I. Khrebtov, Igor V. Ilkiv, Rodion R. Reznik, L Leandro, Nika Akopian, N. V. Kryzhanovskaya, I. P. Soshnikov, Yu. B. Samsonenko |
| المصدر: | Reznik, R R, Kotlyar, K P, Gridchin, V O, Ilkiv, I V, Khrebtov, A I, Samsonenko, Y B, Soshnikov, I P, Kryzhanovskaya, N V, Leandro, L, Akopian, N & Cirlin, G E 2021, ' III-V nanowires with quantum dots: MBE growth and properties ', Journal of Physics: Conference Series, vol. 2015, no. 1, 012124 . https://doi.org/10.1088/1742-6596/2015/1/012124 |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | History, Materials science, business.industry, Quantum dot, Nanowire, Optoelectronics, business, Computer Science Applications, Education |
| الوصف: | We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices. |
| وصف الملف: | application/pdf |
| اللغة: | English |
| DOI: | 10.1088/1742-6596/2015/1/012124 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e9724d7a6792f91054fe76c2c03d798 https://orbit.dtu.dk/en/publications/40b99544-ecbf-41fa-b6f9-c8da135cb126 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....1e9724d7a6792f91054fe76c2c03d798 |
| قاعدة البيانات: | OpenAIRE |
| DOI: | 10.1088/1742-6596/2015/1/012124 |
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