Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis
| العنوان: | Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis |
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| المؤلفون: | Jean-Louis Lazzari, Sihem Jaziri, Hela Boustanji |
| المساهمون: | Faculté des Sciences de Bizerte [Université de Carthage], Université de Carthage - University of Carthage, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Matériaux, Faculté des Sciences de Bizerte |
| المصدر: | Solar Energy Materials and Solar Cells Solar Energy Materials and Solar Cells, 2017, 159, pp.633-639. ⟨10.1016/j.solmat.2016.03.038⟩ Solar Energy Materials and Solar Cells, Elsevier, 2017, 159, pp.633-639. ⟨10.1016/j.solmat.2016.03.038⟩ |
| بيانات النشر: | HAL CCSD, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Schottky barrier, 02 engineering and technology, 7. Clean energy, 01 natural sciences, Capacitance, Condensed Matter::Materials Science, 0103 physical sciences, Dispersion (optics), [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Saturation (magnetic), ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, [PHYS]Physics [physics], Condensed matter physics, Renewable Energy, Sustainability and the Environment, Schottky diode, Biasing, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Quantum dot, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Voltage |
| الوصف: | Theoretical model and numerical analysis of charge accumulation within a single GaSb quantum dots layer embedded in GaAs-based Schottky diode is performed. We hereby give an analytical calculation of the capacitance–voltage (C–V) characteristic of GaAs-based Schottky barrier structure incorporating GaSb self-assembled quantum dots layer. The Schottky barrier is derived in different bias voltage region based on solving analytically Poisson׳s equation, including the effects of the dots size dispersion and the Fermi statistics of the holes in the quantum dots. The numerical simulation of capacitance–voltage curves exhibits a plateau that is caused by the high carrier concentration and the saturation of the quantum dots levels upon the applied voltage. These results are in good agreement with experiments done by Hwang et al. |
| اللغة: | English |
| تدمد: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2016.03.038⟩ |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15c7d0f7b8ab56c658627da99bfa8c20 https://hal.science/hal-01720820 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi.dedup.....15c7d0f7b8ab56c658627da99bfa8c20 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 09270248 |
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| DOI: | 10.1016/j.solmat.2016.03.038⟩ |