Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon
| العنوان: | Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon |
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| المؤلفون: | Alain E. Kaloyeros, Barry C. Arkles, Fernando Jove, Jonathan D. Goff, Youlin Pan |
| المصدر: | Inorganic Chemistry. 58:3050-3057 |
| بيانات النشر: | American Chemical Society (ACS), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Epitaxial Deposition, 010405 organic chemistry, Reactive intermediate, Doping, Silylene, chemistry.chemical_element, Germanium, Chemical vapor deposition, Strained Silicon, 010402 general chemistry, Epitaxy, 01 natural sciences, 0104 chemical sciences, Polysilanes, Inorganic Chemistry, chemistry.chemical_compound, Isotetrasilane, chemistry, Deposition (phase transition), Physical chemistry, Physical and Theoretical Chemistry, Thin film |
| الوصف: | A synthetic method is presented for the production of isotetrasilane, a higher order perhydridosilane, with the purity and volume necessary for use in extensive studies of the chemical vapor deposition (CVD) of epitaxial silicon (e-Si) thin films. The chemical characteristics, thermodynamic properties, and epitaxial film growth of isotetrasilane are compared with those of other perhydridosilanes. A film-growth mechanism distinct from linear perhydridosilanes H(SiH2) nH, where n ≤ 4, is reported. Preliminary findings are summarized for CVD of both unstrained e-Si and strained e-Si doped with germanium (Ge) and carbon (C) employing isotetrasilane as the source precursor at temperatures of 500-550 °C. The results suggest that bis(trihydridosilyl)silylene is the likely deposition intermediate under processing conditions in which gas-phase depletion reactions are not observed. |
| تدمد: | 1520-510X 0020-1669 |
| DOI: | 10.1021/acs.inorgchem.8b02761 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0128529b03b938c9c8cfb05a0b4401d9 https://doi.org/10.1021/acs.inorgchem.8b02761 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....0128529b03b938c9c8cfb05a0b4401d9 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1520510X 00201669 |
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| DOI: | 10.1021/acs.inorgchem.8b02761 |