Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model
| العنوان: | Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model |
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| المؤلفون: | E. G. Yanukyan, A. S. Sigov, S. V. Filippova, A. V. Sankin, D. K. Sysoev, V. I. Altukhov |
| المصدر: | Semiconductors. 52:348-351 |
| بيانات النشر: | Pleiades Publishing Ltd, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Photocurrent, Materials science, Condensed matter physics, Schottky barrier, Composite number, Heterojunction, Charge (physics), 010502 geochemistry & geophysics, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, 0103 physical sciences, Surface charge, 0105 earth and related environmental sciences, Diode, Solid solution |
| الوصف: | A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of diodes with the Schottky barrier M/(SiC)1–x(AlN) x and those of heterojunctions based on SiC and its solid solutions taking into account Φg ≈ ΦB. The results of calculations of the Schottky-barrier heights are consistent with the experimental data obtained from measurements of the photocurrent for metals (M): Al, Ti, Cr, and Ni. The I–V characteristics in the composite–additive model of charge transport agree with the experimental data for the n-M/p-(SiC)1–x(AlN) x and n-6H-SiC/p-(SiC)0.85(AlN)0.15 systems. |
| تدمد: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s106378261803003x |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ffc6d7910b88172771e25db4f978cc9c https://doi.org/10.1134/s106378261803003x |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........ffc6d7910b88172771e25db4f978cc9c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10906479 10637826 |
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| DOI: | 10.1134/s106378261803003x |