Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
| العنوان: | Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films |
|---|---|
| المؤلفون: | Darren B. Thomson, Pradeep Rajagopal, Kevin J. Linthicum, Tsvetanka Zheleva, Scott A. Smith, Robert F. Davis |
| المصدر: | Journal of Electronic Materials. 28:L5-L8 |
| بيانات النشر: | Springer Science and Business Media LLC, 1999. |
| سنة النشر: | 1999 |
| مصطلحات موضوعية: | Coalescence (physics), Materials science, Nucleation, Mineralogy, Gallium nitride, Condensed Matter Physics, Epitaxy, Microstructure, Molecular physics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Transmission electron microscopy, Materials Chemistry, Silicon carbide, Electrical and Electronic Engineering, Dislocation |
| الوصف: | Lateral growth of gallium nitride (GaN) films having a low density of dislocations and suspended from side walls of [0001] oriented GaN columns and over adjacent etched wells has been achieved without the use of, or contact with, a supporting mask or substrate. Pendeo-epitaxy is proposed as the descriptive term for this growth technique. Selective growth was achieved using process parameters that promote lateral growth of the \(\{ 11\bar 20\} \) planes of GaN and disallow nucleation of this phase on the exposed silicon carbide substrate. The large horizontal/vertical growth rate ratio indicate that the diffusion distances and the rates of diffusion of the reactant species along the (0001) surfaces were sufficient to allow them to reach and move along the \(\{ 11\bar 20\} \) surfaces before they were chemically adsorbed. A four-to-five order decrease in the dislocation density was observed via transmission electron microscopy in the free-standing laterally grown GaN relative to that in the GaN columns. Curvature of the \(\{ 11\bar 20\} \) planes as they approached coalescence, and elongated voids below the regions of coalescence were formed. The use of optimized growth conditions or more closely spaced columns should eliminate these voids. |
| تدمد: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0239-z |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f9efe0591256eb2c3ee2a4f6bfe374c1 https://doi.org/10.1007/s11664-999-0239-z |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........f9efe0591256eb2c3ee2a4f6bfe374c1 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1543186X 03615235 |
|---|---|
| DOI: | 10.1007/s11664-999-0239-z |