Fundamental Physical Characterization of Sb2Se3-Based Quasi-Homojunction Thin Film Solar Cells
| العنوان: | Fundamental Physical Characterization of Sb2Se3-Based Quasi-Homojunction Thin Film Solar Cells |
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| المؤلفون: | Guangxing Liang, Michel Cathelinaud, Donglou Ren, Xianghua Zhang, Shuo Chen, Hongli Ma |
| المصدر: | ACS Applied Materials & Interfaces. 12:30572-30583 |
| بيانات النشر: | American Chemical Society (ACS), 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Photocurrent, Materials science, business.industry, Open-circuit voltage, Energy conversion efficiency, 02 engineering and technology, Carrier lifetime, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, 0104 chemical sciences, law.invention, law, Solar cell, Optoelectronics, General Materials Science, Homojunction, 0210 nano-technology, business, Short circuit, Current density |
| الوصف: | A new type of solar cell based on Cu-doped (p-type) and I-doped (n-type) Sb2Se3 has been designed and fabricated using magnetron sputtering with two different thicknesses of absorber. The overall objective is for better understanding the charge recombination mechanism, especially at the interface region. The investigation has been specifically performed using IMPS (intensity modulated photocurrent spectroscopy), IMVS (intensity modulated photovoltage spectroscopy), and diode characterizations. It has been found that an increase of the absorber thickness leads to a shorter carrier lifetime, but longer diffusion length and lower trap density, resulting in significantly better performance. Furthermore, it is demonstrated that trap-assisted recombination does not affect the short-circuit current density (Jsc), but significantly decreases the open-circuit voltage (Voc). As a result, an encouraging power conversion efficiency (PCE) of 2.41%, fill factor (FF) of 41%, Jsc of 20 mA/cm2, and Voc of 294 mV are obtained. Most importantly, key parameters for further increasing the PCE have been identified. |
| تدمد: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.0c08180 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f7deaa8b5d3807b3913458bf33658e20 https://doi.org/10.1021/acsami.0c08180 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........f7deaa8b5d3807b3913458bf33658e20 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448252 19448244 |
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| DOI: | 10.1021/acsami.0c08180 |