The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures
| العنوان: | The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures |
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| المؤلفون: | Jorge A. Kittl, Christa Vrancken, A. Lauwers, M.J.H. van Dal, D. Jawarani, J. G. M. van Berkum, Monja Kaiser, M. de Potter, Karen Maex |
| المصدر: | Journal of Applied Physics. 96:7568-7573 |
| بيانات النشر: | AIP Publishing, 2004. |
| سنة النشر: | 2004 |
| مصطلحات موضوعية: | Materials science, Condensed matter physics, General Physics and Astronomy, Nanotechnology, Chemical vapor deposition, Atmospheric temperature range, engineering.material, chemistry.chemical_compound, Ion implantation, Polycrystalline silicon, chemistry, Phase (matter), Silicide, engineering, Thin film, Sheet resistance |
| الوصف: | Insight in the thermal degradation phenomena and the relation to phase transformation is presented for cobalt disilicide (CoSi2) on narrow polysilicon lines (linewidth ranging from 30nmto1μm) using electrical and morphological analysis in the temperature range 650–900°C. When polysilicon lines are scaled laterally to 30nm, an abrupt CoSi2 sheet resistance increase (>1000Ω∕sq) is observed, which is attributed to silicide agglomeration. At localized positions along the 30-nm Co-silicided lines, Si/silicide layer inversion is observed. At low formation temperature (650°C), no agglomeration phenomena occur, but incidentally the transition from CoSi into CoSi2 is delayed on the 30-nm-wide polysilicon structures to such an extent that the CoSi2 growth virtually stops. Only using nitrogen implantation through CoSi and a CoSi2 formation temperature of 900°C, low sheet resistance values are obtained for 35-nm-wide polysilicon lines. Based on the results obtained in the present work, we propose that the abrupt incr... |
| تدمد: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1815384 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f4df6e9889c750d7e723d6d23109dec2 https://doi.org/10.1063/1.1815384 |
| رقم الانضمام: | edsair.doi...........f4df6e9889c750d7e723d6d23109dec2 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10897550 00218979 |
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| DOI: | 10.1063/1.1815384 |