Charge Separation in Epitaxial SnS/MoS2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD
| العنوان: | Charge Separation in Epitaxial SnS/MoS2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD |
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| المؤلفون: | Pierre Darancet, Paul J. M. Smeets, Qunfei Zhou, Jack N. Olding, Michael J. Moody, Lincoln J. Lauhon, Alex Henning, Jason T. Dong, Emily A. Weiss |
| المصدر: | ACS Applied Materials & Interfaces. 11:40543-40550 |
| بيانات النشر: | American Chemical Society (ACS), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Kelvin probe force microscope, Materials science, Chalcogenide, business.industry, Surface photovoltage, Heterojunction, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry.chemical_compound, chemistry, Monolayer, Optoelectronics, General Materials Science, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, Molybdenum disulfide |
| الوصف: | The weak van der Waals bonding between monolayers in layered materials enables fabrication of heterostructures without the constraints of conventional heteroepitaxy. Although many novel heterostructures have been created by mechanical exfoliation and stacking, the direct growth of 2D chalcogenide heterostructures creates new opportunities for large-scale integration. This paper describes the epitaxial growth of layered, p-type tin sulfide (SnS) on n-type molybdenum disulfide (MoS2) by pulsed metal–organic chemical vapor deposition at 180 °C. The influence of precursor pulse and purge times on film morphology establishes growth conditions that favor layer-by-layer growth of SnS, which is critical for materials with layer-dependent electronic properties. Kelvin probe force microscopy measurements determine a built-in potential as high as 0.95 eV, and under illumination a surface photovoltage is generated, consistent with the expected Type-II band alignment for a multilayer SnS/MoS2 heterostructure. The bott... |
| تدمد: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b14412 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f4b4527acff1b73f1da15e437e0b019c https://doi.org/10.1021/acsami.9b14412 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi...........f4b4527acff1b73f1da15e437e0b019c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448252 19448244 |
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| DOI: | 10.1021/acsami.9b14412 |