Microstructure and intrinsic stress evolution during epitaxial film growth of an Ag0.93Al0.07 solid solution on Si(111); excessive planar faulting due to quantum confinement
العنوان: | Microstructure and intrinsic stress evolution during epitaxial film growth of an Ag0.93Al0.07 solid solution on Si(111); excessive planar faulting due to quantum confinement |
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المؤلفون: | Silke Kurz, David Flötotto, Ingo Markel, Eric J. Mittemeijer, Z. Wang |
المصدر: | Journal of Applied Physics. 120:155305 |
بيانات النشر: | AIP Publishing, 2016. |
سنة النشر: | 2016 |
مصطلحات موضوعية: | Surface diffusion, Materials science, Low-energy electron diffraction, Condensed matter physics, Elastic energy, General Physics and Astronomy, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Microstructure, 01 natural sciences, law.invention, Stress (mechanics), Crystallography, Transmission electron microscopy, law, 0103 physical sciences, Scanning tunneling microscope, 010306 general physics, 0210 nano-technology |
الوصف: | The correlation of microstructural development and the kinetics of film growth has been investigated during the epitaxial film growth of an ultrathin binary Ag0.93Al0.07 solid solution on a Si(111)-7×7 surface at 300 K by the combination of high-resolution transmission electron microscopy, X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction, and real-time in-situ stress measurements. Up to a film thickness of 6 ± 2 nm, epitaxial Ag0.93Al0.07 film growth is characterized by the strikingly extensive formation of planar faults parallel to the film/substrate interface, while at larger thickness the film grows practically defect-free. As revealed by real-time in-situ stress measurements, the extensive formation of planar faults at the very initial stage of growth is not driven by the reduction of the system's elastic strain energy but is rather caused by a striking thickness-dependence of the stacking-fault energy owing to a quantum size effect of the ultrathin metal alloy film, r... |
تدمد: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.4964945 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f481e17853c502e638eff280dcf70a41 https://doi.org/10.1063/1.4964945 |
Rights: | OPEN |
رقم الانضمام: | edsair.doi...........f481e17853c502e638eff280dcf70a41 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 10897550 00218979 |
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DOI: | 10.1063/1.4964945 |