Growth of 28Si Quantum Well Layers for Qubits by a Hybrid MBE/CVD Technique
| العنوان: | Growth of 28Si Quantum Well Layers for Qubits by a Hybrid MBE/CVD Technique |
|---|---|
| المؤلفون: | Yujia Liu, Kevin-Peter Gradwohl, Chen-HSun Lu, Yuji Yamamoto, Thilo Remmele, Cedric Corley-Wiciak, Thomas Teubner, Carsten Richter, Martin Albrecht, Torsten Boeck |
| المصدر: | ECS Journal of Solid State Science and Technology. 12:024006 |
| بيانات النشر: | The Electrochemical Society, 2023. |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | Electronic, Optical and Magnetic Materials |
| الوصف: | Isotopically enriched 28Si quantum well layers in SiGe/Si/SiGe heterostructures are an excellent material platform for electron spin qubits. In this work, we report the fabrication of 28SiGe/28Si/28SiGe heterostructures for qubits by a hybrid molecular beam epitaxy (MBE) / chemical vapour deposition (CVD) growth, where the thick relaxed SiGe substrates are realised by a reduced-pressure CVD and the 28SiGe/28Si/28SiGe stacks are grown by MBE Here, we achieve a fully strained 28Si quantum well layer in such heterostructures with a 29Si concentration as low as 200 ppm within the MBE grown layers. It concludes that 29Si primarily originates from the residual natural Si vapour in the MBE chamber. A reliable surface preparation combining ex situ wet chemical cleaning and in situ annealing and atomic hydrogen irradiation offers epitaxy ready CVD grown SiGe substrates with low carbon and oxygen impurities. Furthermore, we also present our studies about the growth temperature effect on the misfit dislocation formation in this heterostructure. It shows that the misfit dislocation formation is significantly suppressed at a low MBE growth temperature, such as 350 °C. |
| تدمد: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2162-8777/acb734 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ef418fd7bf73ea7ea183e282c16f46a7 https://doi.org/10.1149/2162-8777/acb734 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........ef418fd7bf73ea7ea183e282c16f46a7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21628777 21628769 |
|---|---|
| DOI: | 10.1149/2162-8777/acb734 |