Spin-valley caloritronics in silicene near room temperature
| العنوان: | Spin-valley caloritronics in silicene near room temperature |
|---|---|
| المؤلفون: | Ding Fan, Zhihong Yang, Lan Meng, Xuechao Zhai, Wenwen Gao, Xinlong Cai |
| المصدر: | Physical Review B. 94 |
| بيانات النشر: | American Physical Society (APS), 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | Physics, Spintronics, Condensed matter physics, Band gap, Silicene, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferromagnetism, Electric field, 0103 physical sciences, Valleytronics, Thermoelectric effect, Condensed Matter::Strongly Correlated Electrons, 010306 general physics, 0210 nano-technology, Spin-½ |
| الوصف: | Two-dimensional silicene, with an observable intrinsic spin-orbit coupling, has a great potential to perform fascinating physics and new types of applications in spintronics and valleytronics. By introducing an electromotive force from a temperature difference in ferromagnetic silicene, we discover that a longitudinal spin Seebeck effect can be driven even near room temperature, with spin-up and spin-down currents flowing in opposite directions, originating from the asymmetric electron-hole spin band structures. We further propose a silicene field-effect transistor constructed of two ferromagnetic electrodes and a central dual-gated region, and find that a valley Seebeck effect appears, with currents from two different valleys flowing in opposite directions. The forbidden transport channels are determined by either spin-valley dependent band gaps or spin mismatch. By tuning the electric field in the central region, the transport gaps depending on spin and valley vary correspondingly, and a transition from valley Seebeck effect to spin Seebeck effect is observed. These spin-valley caloritronic results near room temperature are robust against many real perturbations, and thus suggest silicene to be an excellent candidate for future energy-saving technologies and bidirectional information processing in solid-state circuits. |
| تدمد: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.94.245405 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::e3d53a2c4293a25165b333ef2074a5c1 https://doi.org/10.1103/physrevb.94.245405 |
| Rights: | CLOSED |
| رقم الانضمام: | edsair.doi...........e3d53a2c4293a25165b333ef2074a5c1 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 24699969 24699950 |
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| DOI: | 10.1103/physrevb.94.245405 |